Abstract
We demonstrate optically pumped lasing at room temperature from ZnS/ZnCdS quantum-well structures grown on (100) GaP substrates by molecular beam epitaxy. In the structures with the lowest Cd composition, optically pumped lasing at wavelengths as low as 333 nm (at 8 K) is observed. We present spectroscopic evidence which suggests that the stimulated emission involves states in the low-energy tail of an inhomogeneously broadened excitonic resonance. While lasing is excitonic at low thresholds, a transition to an electron-hole plasma mechanism may occur if the pump power approaches 100 kW cm-2. © 1996 American Institute of Physics.
Original language | English |
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Pages (from-to) | 4230-4232 |
Number of pages | 2 |
Journal | Applied Physics Letters |
Volume | 69 |
Issue number | 27 |
Publication status | Published - 30 Dec 1996 |