Spin-orbit-assisted electron-phonon interaction and the magnetophonon resonance in semiconductor quantum wells

D. S L Abergel; Vladimir I. Fal'ko

doi:10.1103/PhysRevB.77.035317

Spin-orbit-assisted electron-phonon interaction and the magnetophonon resonance in semiconductor quantum wells

D. S L Abergel^*, Vladimir I. Fal'ko

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We introduce a spin-orbit assisted electron-phonon (e-ph) coupling mechanism for carriers in semiconductor quantum wells and predict qualitatively the form and shape of anticrossings between the cyclotron resonance (CR) and optical (LO and TO) phonons. Since this e-ph interaction involves the electron spin it makes the predicted TO-CR anticrossing dependent on the filling factor and therefore on the spin polarization of the two-dimensional electron gas in the quantum well.

Original language	English
Article number	035317
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	77
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.77.035317
Publication status	Published - 15 Jan 2008

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National Graphene Institute

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10.1103/PhysRevB.77.035317

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title = "Spin-orbit-assisted electron-phonon interaction and the magnetophonon resonance in semiconductor quantum wells",

abstract = "We introduce a spin-orbit assisted electron-phonon (e-ph) coupling mechanism for carriers in semiconductor quantum wells and predict qualitatively the form and shape of anticrossings between the cyclotron resonance (CR) and optical (LO and TO) phonons. Since this e-ph interaction involves the electron spin it makes the predicted TO-CR anticrossing dependent on the filling factor and therefore on the spin polarization of the two-dimensional electron gas in the quantum well.",

author = "Abergel, \{D. S L\} and Fal'ko, \{Vladimir I.\}",

year = "2008",

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doi = "10.1103/PhysRevB.77.035317",

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AU - Abergel, D. S L

AU - Fal'ko, Vladimir I.

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N2 - We introduce a spin-orbit assisted electron-phonon (e-ph) coupling mechanism for carriers in semiconductor quantum wells and predict qualitatively the form and shape of anticrossings between the cyclotron resonance (CR) and optical (LO and TO) phonons. Since this e-ph interaction involves the electron spin it makes the predicted TO-CR anticrossing dependent on the filling factor and therefore on the spin polarization of the two-dimensional electron gas in the quantum well.

AB - We introduce a spin-orbit assisted electron-phonon (e-ph) coupling mechanism for carriers in semiconductor quantum wells and predict qualitatively the form and shape of anticrossings between the cyclotron resonance (CR) and optical (LO and TO) phonons. Since this e-ph interaction involves the electron spin it makes the predicted TO-CR anticrossing dependent on the filling factor and therefore on the spin polarization of the two-dimensional electron gas in the quantum well.

UR - https://www.scopus.com/pages/publications/38349090844

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DO - 10.1103/PhysRevB.77.035317

M3 - Article

AN - SCOPUS:38349090844

SN - 1098-0121

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 3

M1 - 035317

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Spin-orbit-assisted electron-phonon interaction and the magnetophonon resonance in semiconductor quantum wells

Abstract

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