Spin-polarized electron tunneling across magnetic dielectric

I. V. Shvets, A. N. Grigorenko, K. S. Novoselov, D. J. Mapps

    Research output: Contribution to journalArticlepeer-review

    Abstract

    This letter deals with a magnetic tunnel junction having spin filtering by a magnetic barrier. We performed experiments in which a relatively strong external field rotates magnetizations of both ferromagnetic electrodes in the tunnel junction with the magnetic barrier simultaneously so that the two are always parallel to each other. The tunnel magnetoresistance induced in this way was over 16% at 300 K. The angular dependency of the tunnel current on the layer magnetizations indicates that the barrier contains antiferromagnetic oxide. To achieve the described effect the magnetic electrode of the junction was oxidized prior to forming the Al2 O3 layer. © 2005 American Institute of Physics.
    Original languageEnglish
    Article number212501
    Pages (from-to)1-3
    Number of pages2
    JournalApplied Physics Letters
    Volume86
    Issue number21
    DOIs
    Publication statusPublished - 23 May 2005

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