Split gate and asymmetric contact carbon nanotube optical devices

M. A. Hughes, Kevin P. Homewood, R. J. Curry, Yuko Ohno, T. Mizutani

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


    Asymmetric contacts or split gate geometries can be used to obtain rectification, electroluminescence (EL) and photocurrent from carbon nanotube field effect transistors. Here, we report devices with both split gates and asymmetric contacts and show that device parameters can be optimised with an appropriate split gate bias, giving the ability to select the rectification direction, modify the reverse bias saturation current and the ideality factor. When operated as a photodiode, the short circuit current and open circuit voltage can be modified by the split gate bias, and the estimated power conversion efficiency was 1×10-6. When using split gates and symmetric contacts, strong EL peaking at 0.86 eV was observed with a full width at half maximum varying between 64 and 120 meV, depending on the bias configuration. The power and quantum efficiency of the EL was estimated to be around 1×10-6 and 1×10-5 respectively.

    Original languageEnglish
    Title of host publicationOptical Components and Materials XI
    Number of pages15
    ISBN (Print)9780819498953
    Publication statusPublished - 2014
    EventOptical Components and Materials XI - San Francisco, CA, United States
    Duration: 3 Feb 20145 Feb 2014


    ConferenceOptical Components and Materials XI
    Country/TerritoryUnited States
    CitySan Francisco, CA


    • Asymmetric contact
    • Carbon nanotube
    • Electroluminescence
    • Photocurrent
    • Split gate


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