Stability of graphene doping with MoO3 and I2

Lorenzo D'Arsie; Santiago Esconjauregui; Robert Weatherup; Yuzheng Guo; Sunil Bhardwaj; Alba Centeno; Amaia Zurutuza; Cinzia Cepek; John Robertson

doi:10.1063/1.4895025

Stability of graphene doping with MoO₃ and I₂

Lorenzo D'Arsie
, Santiago Esconjauregui
, Robert Weatherup
, Yuzheng Guo
, Sunil Bhardwaj
, Alba Centeno
, Amaia Zurutuza
, Cinzia Cepek
, John Robertson

Research output: Contribution to journal › Article › peer-review

Abstract

We dope graphene by evaporation of MoO3 or by solution-deposition of I2 and assess the doping stability for its use as transparent electrodes. Electrical measurements show that both dopants increase the graphene sheet conductivity and find that MoO3-doped graphene is significantly more stable during thermal cycling. Raman spectroscopy finds that neither dopant creates defects in the graphene lattice. In-situ photoemission determines the minimum necessary thickness of MoO3 for full graphene doping.

Original language	English
Journal	Applied Physics Letters
Volume	105
Issue number	10
DOIs	https://doi.org/10.1063/1.4895025
Publication status	Published - 8 Sept 2014

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10.1063/1.4895025

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@article{95e64ccb79d743a88104e74ecc43310e,

title = "Stability of graphene doping with MoO3 and I2",

abstract = "We dope graphene by evaporation of MoO3 or by solution-deposition of I2 and assess the doping stability for its use as transparent electrodes. Electrical measurements show that both dopants increase the graphene sheet conductivity and find that MoO3-doped graphene is significantly more stable during thermal cycling. Raman spectroscopy finds that neither dopant creates defects in the graphene lattice. In-situ photoemission determines the minimum necessary thickness of MoO3 for full graphene doping.",

author = "Lorenzo D'Arsie and Santiago Esconjauregui and Robert Weatherup and Yuzheng Guo and Sunil Bhardwaj and Alba Centeno and Amaia Zurutuza and Cinzia Cepek and John Robertson",

year = "2014",

month = sep,

day = "8",

doi = "10.1063/1.4895025",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Stability of graphene doping with MoO3 and I2

AU - D'Arsie, Lorenzo

AU - Esconjauregui, Santiago

AU - Weatherup, Robert

AU - Guo, Yuzheng

AU - Bhardwaj, Sunil

AU - Centeno, Alba

AU - Zurutuza, Amaia

AU - Cepek, Cinzia

AU - Robertson, John

PY - 2014/9/8

Y1 - 2014/9/8

N2 - We dope graphene by evaporation of MoO3 or by solution-deposition of I2 and assess the doping stability for its use as transparent electrodes. Electrical measurements show that both dopants increase the graphene sheet conductivity and find that MoO3-doped graphene is significantly more stable during thermal cycling. Raman spectroscopy finds that neither dopant creates defects in the graphene lattice. In-situ photoemission determines the minimum necessary thickness of MoO3 for full graphene doping.

AB - We dope graphene by evaporation of MoO3 or by solution-deposition of I2 and assess the doping stability for its use as transparent electrodes. Electrical measurements show that both dopants increase the graphene sheet conductivity and find that MoO3-doped graphene is significantly more stable during thermal cycling. Raman spectroscopy finds that neither dopant creates defects in the graphene lattice. In-situ photoemission determines the minimum necessary thickness of MoO3 for full graphene doping.

U2 - 10.1063/1.4895025

DO - 10.1063/1.4895025

M3 - Article

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Stability of graphene doping with MoO3 and I2

Abstract

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Stability of graphene doping with MoO₃ and I₂