Stacking domains and dislocation networks in marginally twisted bilayers of transition metal dichalcogenides

Vladimir Enaldiev, Viktor Zolyomi, Celal Yelgel, Samuel Magorrian, Vladimir Fal'ko

Research output: Contribution to journalArticlepeer-review

Abstract

We apply a multiscale modeling approach to study lattice reconstruction in marginally twisted bilayers of transition metal dichalcogenides (TMD). For this, we develop DFT-parametrized interpolation formulae for interlayer adhesion energies of MoSe2, WSe2, MoS2, and WS2, combine those with elasticity theory, and analyze the bilayer lattice relaxation into mesoscale domain structures. Paying particular attention to the inversion asymmetry of TMD monolayers, we show that 3R and 2H stacking domains, separated by a network of dislocations develop for twist angles $^{}
Original languageEnglish
Article number206101
JournalPhysical Review Letters
Volume124
Issue number20
DOIs
Publication statusPublished - 20 May 2020

Keywords

  • 2D materials
  • twistronics
  • superlattice

Research Beacons, Institutes and Platforms

  • National Graphene Institute

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