Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells

Stephen Church, Boning Ding, Peter Mitchell, Menno J. Kappers, Martin Frentrup, Gunnar Kusch, Simon Fairclough, David Wallis, Rachel A. Oliver, David Binks (Corresponding)

Research output: Contribution to journalLetterpeer-review

Abstract

Zincblende InGaN/GaN quantum wells offer a potential improvement to the efficiency of green light emission by removing the strong electric fields present in similar structures. However, a high density of stacking faults may have an impact on the recombination in these systems. In this work, scanning transmission electron microscopy and energy-dispersive x-ray measurements demonstrate that one-dimensional nanostructures form due to indium segregation adjacent to stacking faults. In photoluminescence experiments, these structures emit visible light, which is optically polarized up to 86% at 10 K and up to 75% at room temperature. The emission redshifts and broadens as the well width increases from 2 nm to 8 nm. Photoluminescence excitation measurements indicate that carriers are captured by these structures from the rest of the quantum wells and recombine to emit light polarized along the length of these nanostructures.
Original languageEnglish
Article number032103
JournalApplied Physics Letters
Volume117
Early online date20 Jul 2020
DOIs
Publication statusE-pub ahead of print - 20 Jul 2020

Keywords

  • InGaN/GaN
  • Quantum wells
  • polarisation

Research Beacons, Institutes and Platforms

  • Photon Science Institute

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