Stoichiometry related phenomena in low temperature grown GaAs

M. Missous; S. O'Hagan

Stoichiometry related phenomena in low temperature grown GaAs

M. Missous^*, S. O'Hagan

^*Corresponding author for this work

EEE - Academic & Research

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

The growth of GaAs at low temperatures (LT-GaAs) at or below 250 °C, under standard Molecular Beam Epitaxy (MBE) growth conditions, usually results in a massive incorporation of excess As in the lattice which then totally dominates the electrical and optical characteristics of the as grown material. We report on new phenomena associated with the growth of GaAs at 250 °C and we show, for the first time, data on highly electrically active doped material. By careful control of the growth conditions, namely As₄/Ga flux ratios, material in which total defect concentrations of less than 10¹⁷ cm^-3, well below the huge 10²⁰ cm^-3 that is normally obtained in LT-GaAs, can be achieved thereby demonstrating that high quality GaAs can in effect be grown at extremely low temperatures.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Publisher	Materials Research Society
Pages	371-376
Number of pages	6
ISBN (Print)	1558992243
Publication status	Published - 1 Jan 1994
Event	Proceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications - Boston, MA, USA Duration: 29 Nov 1993 → 1 Dec 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	325
ISSN (Print)	0272-9172

Conference

Conference	Proceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications
City	Boston, MA, USA
Period	29/11/93 → 1/12/93

Cite this

@inproceedings{9cc10a4a324f42cfa3720af67f532853,

title = "Stoichiometry related phenomena in low temperature grown GaAs",

abstract = "The growth of GaAs at low temperatures (LT-GaAs) at or below 250 °C, under standard Molecular Beam Epitaxy (MBE) growth conditions, usually results in a massive incorporation of excess As in the lattice which then totally dominates the electrical and optical characteristics of the as grown material. We report on new phenomena associated with the growth of GaAs at 250 °C and we show, for the first time, data on highly electrically active doped material. By careful control of the growth conditions, namely As4/Ga flux ratios, material in which total defect concentrations of less than 1017 cm-3, well below the huge 1020 cm-3 that is normally obtained in LT-GaAs, can be achieved thereby demonstrating that high quality GaAs can in effect be grown at extremely low temperatures.",

author = "M. Missous and S. O'Hagan",

year = "1994",

month = jan,

day = "1",

language = "English",

isbn = "1558992243",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "371--376",

booktitle = "Materials Research Society Symposium Proceedings",

address = "United States",

note = "Proceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications ; Conference date: 29-11-1993 Through 01-12-1993",

}

TY - GEN

T1 - Stoichiometry related phenomena in low temperature grown GaAs

AU - Missous, M.

AU - O'Hagan, S.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - The growth of GaAs at low temperatures (LT-GaAs) at or below 250 °C, under standard Molecular Beam Epitaxy (MBE) growth conditions, usually results in a massive incorporation of excess As in the lattice which then totally dominates the electrical and optical characteristics of the as grown material. We report on new phenomena associated with the growth of GaAs at 250 °C and we show, for the first time, data on highly electrically active doped material. By careful control of the growth conditions, namely As4/Ga flux ratios, material in which total defect concentrations of less than 1017 cm-3, well below the huge 1020 cm-3 that is normally obtained in LT-GaAs, can be achieved thereby demonstrating that high quality GaAs can in effect be grown at extremely low temperatures.

AB - The growth of GaAs at low temperatures (LT-GaAs) at or below 250 °C, under standard Molecular Beam Epitaxy (MBE) growth conditions, usually results in a massive incorporation of excess As in the lattice which then totally dominates the electrical and optical characteristics of the as grown material. We report on new phenomena associated with the growth of GaAs at 250 °C and we show, for the first time, data on highly electrically active doped material. By careful control of the growth conditions, namely As4/Ga flux ratios, material in which total defect concentrations of less than 1017 cm-3, well below the huge 1020 cm-3 that is normally obtained in LT-GaAs, can be achieved thereby demonstrating that high quality GaAs can in effect be grown at extremely low temperatures.

UR - http://www.scopus.com/inward/record.url?scp=0028288851&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0028288851

SN - 1558992243

T3 - Materials Research Society Symposium Proceedings

SP - 371

EP - 376

BT - Materials Research Society Symposium Proceedings

PB - Materials Research Society

T2 - Proceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications

Y2 - 29 November 1993 through 1 December 1993

ER -

Stoichiometry related phenomena in low temperature grown GaAs

Abstract

Publication series

Conference

Other files and links

Fingerprint

Cite this