The elastic and dielectric properties of binary III-N wurtzite semiconductors have been investigated as a function of strain. Using an ab initio density functional theory (DFT), we concentrate on the internal displacement (u) and Born effective charge (Z*) and show that our model provides a unique non linear dependence of the III-N material properties as a function of strain.
|Title of host publication||3rd Workshop on Theory, Modelling and Computational Methods for Semiconductors|
|Publication status||Published - 2012|
|Name||Journal of Physics Conference Series|