@inbook{1ff54c65bd8745829257f74a9cdd8abe,
title = "Strain dependence of Internal Displacement and Effective Charge in Wurtzite III-N semiconductors",
abstract = "The elastic and dielectric properties of binary III-N wurtzite semiconductors have been investigated as a function of strain. Using an ab initio density functional theory (DFT), we concentrate on the internal displacement (u) and Born effective charge (Z*) and show that our model provides a unique non linear dependence of the III-N material properties as a function of strain.",
author = "Joydeep Pal and Geoffrey Tse and Vesel Haxha and Migliorato, {Max A} and Stanko Tomic",
note = "Times Cited: 0 TMCSIII 3rd Workshop on Theory, Modelling and Computational Methods for Semiconductor Materials and Nanostructures (TMCS) JAN 18-20, 2012 Univ Leeds, Sch Elect & Elect Engn, Leeds, ENGLAND Inst Phys (Computat Phys grp & Semiconductor Phys grp); QuantumWise",
year = "2012",
doi = "10.1088/1742-6596/367/1/012006",
language = "English",
isbn = "1742-6588 *****************",
volume = "367",
series = "Journal of Physics Conference Series",
booktitle = "3rd Workshop on Theory, Modelling and Computational Methods for Semiconductors",
}