Strong luminescence from erbium in Si/Si1-xGex/Si quantum well structures

M. Q. Huda, A. R. Peaker, J. H. Evans-Freeman, D. C. Houghton, W. P. Gillin

Research output: Contribution to journalLetterpeer-review

Abstract

Sharp, strong luminescence has been obtained from erbium in silicon-germanium quantum well structures. The quantum well layers were implanted with erbium, followed by amorphisation using a silicon implant at 77K. The structures were then recrystallised by solid phase epitaxial regrowth at 550°C. Compared with bulk silicon systems, stronger erbium activity was observed in the quantum well host.

Original languageEnglish
Pages (from-to)1182-1183
Number of pages2
Journal Electronics Letters
Volume33
Issue number13
DOIs
Publication statusPublished - 19 Jun 1997

Keywords

  • Luminescence
  • Silicon
  • Silicon-germanium

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