Structural and compositional study of Erbium-doped silicon nanocrystals by HAADF, EELS and HRTEM techniques in an aberration corrected STEM

R. J. Kashtiban, U. Bangert, I. Crowe, P. Halsall, B. Sherliker, J. Harvey, J. Eccles, A. P. Knights, R. Gwilliam, M. Gass

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Er-doped SiO2 and Si nano-crystals (NCs) embedded in a SiO2 matrix were produced by ion beam implantation of Si (100) substrates. After annealing Er ions agglomerate in different positions with different compositional properties in samples with and without Si implants. HAADF and EELS show that in the sample with Si implants the Si and Er distribution is identical and within a band of ~110nm width ~75nm below theSiO2 surface whereas in the sample with no excess Si, Er forms on average much larger, amorphous aggregates, presumably an Er-oxide, in the SiO2 matrix with tendency to move towards the surface of the SiO2 layer
    Original languageEnglish
    Title of host publicationJournal of Physics: Conference Series
    PublisherIOP Publishing Ltd
    Volume209
    DOIs
    Publication statusPublished - 2010
    EventEMAG 2009 - Sheffield
    Duration: 1 Jan 1824 → …

    Publication series

    NameJournal of Physics: Conference Series
    PublisherInstitute of Physics

    Conference

    ConferenceEMAG 2009
    CitySheffield
    Period1/01/24 → …

    Keywords

    • Si nanocrystals, Er doping, EELS, HRTEM, STEM, HAADF

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