Abstract
In this paper we present a study of the structure, composition and optical properties of SiGe quantum dots grown by gas-source molecular beam epitaxy on Si (001). Atomic force microscopy (AFM), transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), energy dispersive X-ray analysis (EDX), photoluminescence (PL) spectroscopy and decay time measurements of the quantum dots suggest that there are two distinct sizes of quantum dot, contributing two distinct emission bands in the PL spectra.
| Original language | English |
|---|---|
| Pages (from-to) | 265-269 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 224 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Mar 2001 |
Keywords
- Size effect (difference in photoluminescence decay rates of germanium silicide quantum dots with different sizes and shapes); Surface structure (of self-organized germanium quantum dots from AFM and STEM images); Quantum transition (photoluminescence decay; difference in photoluminescence decay rates of germanium silicide quantum dots with different sizes and shapes); Quantum dot devices (self-assembled; structural, compositional and optical properties of self-organized germanium silicide quantum dots); Self-assembled monolayers (structural, compositional and optical properties of self-organized germanium silicide quantum dots); Molecular beam epitaxy (structural, compositional and optical properties of self-organized germanium silicide quantum dots grown by); Luminescence (time-resolved; structural, compositional and optical properties of self-organized germanium silicide quantum dots)