Structure, electronic properties and annealing behavior of  Di-interstitial-oxygen center in silicon

V. P. Markevich; A. R. Peaker; B. Hamilton; V. E. Gusakov; S. B. Lastovskii; L. I. Murin; N. Ganagona; E. V. Monakhov; B. G. Svensson

doi:10.4028/www.scientific.net/SSP.242.290

Structure, electronic properties and annealing behavior of Di-interstitial-oxygen center in silicon

V. P. Markevich^*, A. R. Peaker, B. Hamilton, V. E. Gusakov, S. B. Lastovskii, L. I. Murin, N. Ganagona, E. V. Monakhov, B. G. Svensson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

It is argued in this work that a DLTS signal associated with hole emission from a radiation-induced defect with an energy level at E_v + 0.09 eV is related to a complex of silicon diinterstitial with an oxygen atom (I₂O). This signal has been observed in the DLTS spectra of p-type Si:O samples irradiated with either 4-6 MeV electrons or alpha particles. Isochronal and isothermal annealing studies of the samples have shown that the defect responsible for the DLTS signal from the E_v + 0.09 eV level disappears upon heat-treatments in the temperature range 75-100 °C and its formation and annealing behavior is similar to that of a center giving rise to the infrared absorption band at 936 cm-1 previously assigned to a local vibrational mode (LVM) due to the I₂O complex. Possible configurations of the I₂O complex have been found by ab-initio modeling and analyzed. Formation and binding energies, energy levels and LVMs for different configurations have been determined. It has been found that the minimum energy configuration of the I₂O complex consists of the compact I2 to which a divalent interstitial oxygen atom is attached. Calculated values of the strongest LVM (ν = 971 CM^-1) and position of the donor level {E_v + (0.11-0.13) eV} for the minimum energy configuration are very close to those assigned to the I₂O defect in the infrared absorption and DLTS experiments.

Original language	English
Pages (from-to)	290-295
Number of pages	6
Journal	Solid State Phenomena
Volume	242
DOIs	https://doi.org/10.4028/www.scientific.net/SSP.242.290 https://doi.org/10.4028/www.scientific.net/SSP.242.290
Publication status	Published - 1 Oct 2015
Event	16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015 - Bad Staffelstein, Germany Duration: 20 Sept 2015 → 25 Sept 2015

Keywords

Ab-initio modeling
Di-interstitial
DLTS
Energy levels
Oxygen
Silicon

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Markevich, V. P., Peaker, A. R., Hamilton, B., Gusakov, V. E., Lastovskii, S. B., Murin, L. I., Ganagona, N., Monakhov, E. V., & Svensson, B. G. (2015). Structure, electronic properties and annealing behavior of Di-interstitial-oxygen center in silicon. Solid State Phenomena, 242, 290-295. https://doi.org/10.4028/www.scientific.net/SSP.242.290, https://doi.org/10.4028/www.scientific.net/SSP.242.290

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title = "Structure, electronic properties and annealing behavior of Di-interstitial-oxygen center in silicon",

abstract = "It is argued in this work that a DLTS signal associated with hole emission from a radiation-induced defect with an energy level at Ev + 0.09 eV is related to a complex of silicon diinterstitial with an oxygen atom (I2O). This signal has been observed in the DLTS spectra of p-type Si:O samples irradiated with either 4-6 MeV electrons or alpha particles. Isochronal and isothermal annealing studies of the samples have shown that the defect responsible for the DLTS signal from the Ev + 0.09 eV level disappears upon heat-treatments in the temperature range 75-100 °C and its formation and annealing behavior is similar to that of a center giving rise to the infrared absorption band at 936 cm-1 previously assigned to a local vibrational mode (LVM) due to the I2O complex. Possible configurations of the I2O complex have been found by ab-initio modeling and analyzed. Formation and binding energies, energy levels and LVMs for different configurations have been determined. It has been found that the minimum energy configuration of the I2O complex consists of the compact I2 to which a divalent interstitial oxygen atom is attached. Calculated values of the strongest LVM (ν = 971 CM-1) and position of the donor level {Ev + (0.11-0.13) eV} for the minimum energy configuration are very close to those assigned to the I2O defect in the infrared absorption and DLTS experiments.",

keywords = "Ab-initio modeling, Di-interstitial, DLTS, Energy levels, Oxygen, Silicon",

author = "Markevich, {V. P.} and Peaker, {A. R.} and B. Hamilton and Gusakov, {V. E.} and Lastovskii, {S. B.} and Murin, {L. I.} and N. Ganagona and Monakhov, {E. V.} and Svensson, {B. G.}",

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doi = "10.4028/www.scientific.net/SSP.242.290",

language = "English",

volume = "242",

pages = "290--295",

journal = "Solid State Phenomena",

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note = "16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015 ; Conference date: 20-09-2015 Through 25-09-2015",

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Markevich, VP, Peaker, AR, Hamilton, B, Gusakov, VE, Lastovskii, SB, Murin, LI, Ganagona, N, Monakhov, EV & Svensson, BG 2015, 'Structure, electronic properties and annealing behavior of Di-interstitial-oxygen center in silicon', Solid State Phenomena, vol. 242, pp. 290-295. https://doi.org/10.4028/www.scientific.net/SSP.242.290, https://doi.org/10.4028/www.scientific.net/SSP.242.290

TY - JOUR

T1 - Structure, electronic properties and annealing behavior of Di-interstitial-oxygen center in silicon

AU - Markevich, V. P.

AU - Peaker, A. R.

AU - Hamilton, B.

AU - Gusakov, V. E.

AU - Lastovskii, S. B.

AU - Murin, L. I.

AU - Ganagona, N.

AU - Monakhov, E. V.

AU - Svensson, B. G.

PY - 2015/10/1

Y1 - 2015/10/1

N2 - It is argued in this work that a DLTS signal associated with hole emission from a radiation-induced defect with an energy level at Ev + 0.09 eV is related to a complex of silicon diinterstitial with an oxygen atom (I2O). This signal has been observed in the DLTS spectra of p-type Si:O samples irradiated with either 4-6 MeV electrons or alpha particles. Isochronal and isothermal annealing studies of the samples have shown that the defect responsible for the DLTS signal from the Ev + 0.09 eV level disappears upon heat-treatments in the temperature range 75-100 °C and its formation and annealing behavior is similar to that of a center giving rise to the infrared absorption band at 936 cm-1 previously assigned to a local vibrational mode (LVM) due to the I2O complex. Possible configurations of the I2O complex have been found by ab-initio modeling and analyzed. Formation and binding energies, energy levels and LVMs for different configurations have been determined. It has been found that the minimum energy configuration of the I2O complex consists of the compact I2 to which a divalent interstitial oxygen atom is attached. Calculated values of the strongest LVM (ν = 971 CM-1) and position of the donor level {Ev + (0.11-0.13) eV} for the minimum energy configuration are very close to those assigned to the I2O defect in the infrared absorption and DLTS experiments.

AB - It is argued in this work that a DLTS signal associated with hole emission from a radiation-induced defect with an energy level at Ev + 0.09 eV is related to a complex of silicon diinterstitial with an oxygen atom (I2O). This signal has been observed in the DLTS spectra of p-type Si:O samples irradiated with either 4-6 MeV electrons or alpha particles. Isochronal and isothermal annealing studies of the samples have shown that the defect responsible for the DLTS signal from the Ev + 0.09 eV level disappears upon heat-treatments in the temperature range 75-100 °C and its formation and annealing behavior is similar to that of a center giving rise to the infrared absorption band at 936 cm-1 previously assigned to a local vibrational mode (LVM) due to the I2O complex. Possible configurations of the I2O complex have been found by ab-initio modeling and analyzed. Formation and binding energies, energy levels and LVMs for different configurations have been determined. It has been found that the minimum energy configuration of the I2O complex consists of the compact I2 to which a divalent interstitial oxygen atom is attached. Calculated values of the strongest LVM (ν = 971 CM-1) and position of the donor level {Ev + (0.11-0.13) eV} for the minimum energy configuration are very close to those assigned to the I2O defect in the infrared absorption and DLTS experiments.

KW - Ab-initio modeling

KW - Di-interstitial

KW - DLTS

KW - Energy levels

KW - Oxygen

KW - Silicon

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U2 - 10.4028/www.scientific.net/SSP.242.290

DO - 10.4028/www.scientific.net/SSP.242.290

M3 - Article

AN - SCOPUS:84953931473

SN - 1662-9779

VL - 242

SP - 290

EP - 295

JO - Solid State Phenomena

JF - Solid State Phenomena

T2 - 16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015

Y2 - 20 September 2015 through 25 September 2015

ER -

Structure, electronic properties and annealing behavior of Di-interstitial-oxygen center in silicon

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Keywords

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