Structure, Electronic Properties and Annealing Behaviour of Di-Interstitial Oxygen Center in Silicon

Bruce Hamilton, Anthony Peaker, Vladimir Markevich

    Research output: Contribution to journalArticlepeer-review

    Original languageEnglish
    Pages (from-to)290-295
    Number of pages6
    JournalSolid State Phenomena
    Volume242
    Early online dateOct 2015
    DOIs
    Publication statusPublished - 2016

    Keywords

    • silicon di-interstitial oxygen energy levels DLTS ab-initio

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