Structure of the DX state formed by donors in (Al,Ga)As and Ga(As,P)

L. Dobaczewski; P. Kaczor; M. Missous; A. R. Peaker; Z. R. Zytkiewicz

doi:10.1063/1.360100

Structure of the DX state formed by donors in (Al,Ga)As and Ga(As,P)

L. Dobaczewski^*, P. Kaczor, M. Missous, A. R. Peaker, Z. R. Zytkiewicz

^*Corresponding author for this work

EEE - Academic & Research

Polish Academy of Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

High-resolution Laplace-transform deep level transient spectroscopy has been used to study the influence of the defect local environment on electron emission from the DX centers related to group-IV (silicon) donors in Al _xGa_1-xAs (0.20<x<0.76) and δ-doped GaAs and group-VI (tellurium) donor elements in Al_xGa_1-xAs (0.25<x<0.73) and GaAs_0.35P_0.65. The experimental evidence that substitutional-interstitial atom motion is responsible for DX behavior and for the associated metastability effects is presented. The atom which is subjected to this transition is for DX(Si) silicon itself, as in the spectra only one group of peaks in Al_xGa_1-xAs is observed, while for DX(Te) it can be either gallium or aluminum, producing two groups of peaks in Al_xGa_1-x As and three or four broad emission bands in GaAs_0.35P_0.65. The present results rule out a possibility that the DX-type defect states are formed by a donor atom in a stable substitutional position with a small lattice relaxation or with a fully symmetric large lattice relaxation effect.

Original language	English
Pages (from-to)	2468-2477
Number of pages	10
Journal	Journal of Applied Physics
Volume	78
Issue number	4
DOIs	https://doi.org/10.1063/1.360100
Publication status	Published - 1 Dec 1995

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title = "Structure of the DX state formed by donors in (Al,Ga)As and Ga(As,P)",

abstract = "High-resolution Laplace-transform deep level transient spectroscopy has been used to study the influence of the defect local environment on electron emission from the DX centers related to group-IV (silicon) donors in Al xGa1-xAs (0.20xGa1-xAs (0.250.35P0.65. The experimental evidence that substitutional-interstitial atom motion is responsible for DX behavior and for the associated metastability effects is presented. The atom which is subjected to this transition is for DX(Si) silicon itself, as in the spectra only one group of peaks in AlxGa1-xAs is observed, while for DX(Te) it can be either gallium or aluminum, producing two groups of peaks in AlxGa1-x As and three or four broad emission bands in GaAs0.35P0.65. The present results rule out a possibility that the DX-type defect states are formed by a donor atom in a stable substitutional position with a small lattice relaxation or with a fully symmetric large lattice relaxation effect.",

author = "L. Dobaczewski and P. Kaczor and M. Missous and Peaker, {A. R.} and Zytkiewicz, {Z. R.}",

year = "1995",

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doi = "10.1063/1.360100",

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T1 - Structure of the DX state formed by donors in (Al,Ga)As and Ga(As,P)

AU - Dobaczewski, L.

AU - Kaczor, P.

AU - Missous, M.

AU - Peaker, A. R.

AU - Zytkiewicz, Z. R.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - High-resolution Laplace-transform deep level transient spectroscopy has been used to study the influence of the defect local environment on electron emission from the DX centers related to group-IV (silicon) donors in Al xGa1-xAs (0.20xGa1-xAs (0.250.35P0.65. The experimental evidence that substitutional-interstitial atom motion is responsible for DX behavior and for the associated metastability effects is presented. The atom which is subjected to this transition is for DX(Si) silicon itself, as in the spectra only one group of peaks in AlxGa1-xAs is observed, while for DX(Te) it can be either gallium or aluminum, producing two groups of peaks in AlxGa1-x As and three or four broad emission bands in GaAs0.35P0.65. The present results rule out a possibility that the DX-type defect states are formed by a donor atom in a stable substitutional position with a small lattice relaxation or with a fully symmetric large lattice relaxation effect.

AB - High-resolution Laplace-transform deep level transient spectroscopy has been used to study the influence of the defect local environment on electron emission from the DX centers related to group-IV (silicon) donors in Al xGa1-xAs (0.20xGa1-xAs (0.250.35P0.65. The experimental evidence that substitutional-interstitial atom motion is responsible for DX behavior and for the associated metastability effects is presented. The atom which is subjected to this transition is for DX(Si) silicon itself, as in the spectra only one group of peaks in AlxGa1-xAs is observed, while for DX(Te) it can be either gallium or aluminum, producing two groups of peaks in AlxGa1-x As and three or four broad emission bands in GaAs0.35P0.65. The present results rule out a possibility that the DX-type defect states are formed by a donor atom in a stable substitutional position with a small lattice relaxation or with a fully symmetric large lattice relaxation effect.

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SN - 0021-8979

VL - 78

SP - 2468

EP - 2477

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Structure of the DX state formed by donors in (Al,Ga)As and Ga(As,P)

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