Study of He+-implant isolation of InP/InGaAs HBT structures using TLM

S. C. Subramaniam; A. A. Rezazadeh

doi:10.1002/pssa.200306296

Study of He+-implant isolation of InP/InGaAs HBT structures using TLM

S. C. Subramaniam, A. A. Rezazadeh

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Abstract

In this paper for the first time we present results of annealing characteristics of He+-ion implant isolation into InP/InGaAs HBT structures. The maximum bombarded Rsh for all emitter, base and collector contact layers occurred at 350 °C. The collector contact had a Rsh of 8 × 104 ω/sq. It was also observed that the existence of built-in electric field in the E/B and B/C junctions could have enhanced the electron hopping for the bombarded emitter and base regions producing greater damage change as compared to the change in Rsh for the collector layer.

Original language	English
Pages (from-to)	133-136
Number of pages	3
Journal	Physica Status Solidi (A) Applied Research
Volume	195
Issue number	1
DOIs	https://doi.org/10.1002/pssa.200306296
Publication status	Published - Jan 2003

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abstract = "In this paper for the first time we present results of annealing characteristics of He+-ion implant isolation into InP/InGaAs HBT structures. The maximum bombarded Rsh for all emitter, base and collector contact layers occurred at 350 °C. The collector contact had a Rsh of 8 × 104 ω/sq. It was also observed that the existence of built-in electric field in the E/B and B/C junctions could have enhanced the electron hopping for the bombarded emitter and base regions producing greater damage change as compared to the change in Rsh for the collector layer.",

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year = "2003",

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N2 - In this paper for the first time we present results of annealing characteristics of He+-ion implant isolation into InP/InGaAs HBT structures. The maximum bombarded Rsh for all emitter, base and collector contact layers occurred at 350 °C. The collector contact had a Rsh of 8 × 104 ω/sq. It was also observed that the existence of built-in electric field in the E/B and B/C junctions could have enhanced the electron hopping for the bombarded emitter and base regions producing greater damage change as compared to the change in Rsh for the collector layer.

AB - In this paper for the first time we present results of annealing characteristics of He+-ion implant isolation into InP/InGaAs HBT structures. The maximum bombarded Rsh for all emitter, base and collector contact layers occurred at 350 °C. The collector contact had a Rsh of 8 × 104 ω/sq. It was also observed that the existence of built-in electric field in the E/B and B/C junctions could have enhanced the electron hopping for the bombarded emitter and base regions producing greater damage change as compared to the change in Rsh for the collector layer.

UR - https://www.scopus.com/pages/publications/0037278352

U2 - 10.1002/pssa.200306296

DO - 10.1002/pssa.200306296

M3 - Article

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JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 1

ER -

Study of He+-implant isolation of InP/InGaAs HBT structures using TLM

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