InGaN/GaN multilayer quantum dot structures produced by MOCVD techniques on c-plane sapphire were studied by transmission electron microscopy (TEM) and photoluminescence (PL) techniques. Indium fluctuations ranging from 1-4 nm were observed with both energy filtered TEM (EFTEM) and high angle annular dark field (HAADF) scanning TEM. The existence of V-shaped defects with nucleation centres at the termination of threading dislocation were observed in HAADF images. There was also evidence of the formation of large quantum dots at low densities from lattice HRTEM images. This was further confirmed by PL measurements through the observation of a single sharp line at low power with the typical saturation behaviour at higher power excitation. © 2010 IOP Publishing Ltd.
|Title of host publication||Journal of Physics: Conference Series|J. Phys. Conf. Ser.|
|Publisher||IOP Publishing Ltd|
|Publication status||Published - 2010|
|Event||EMAG 2009 - Sheffield|
Duration: 1 Jan 1824 → …
|Period||1/01/24 → …|
- InGaN quantum dots, TEM, PL