Study of InGaN/GaN quantum dot systems by TEM techniques and photoluminescence spectroscopy

R. J. Kashtiban, U. Bangert, B. Sherliker, M. P. Halsall, A. J. Harvey

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


    InGaN/GaN multilayer quantum dot structures produced by MOCVD techniques on c-plane sapphire were studied by transmission electron microscopy (TEM) and photoluminescence (PL) techniques. Indium fluctuations ranging from 1-4 nm were observed with both energy filtered TEM (EFTEM) and high angle annular dark field (HAADF) scanning TEM. The existence of V-shaped defects with nucleation centres at the termination of threading dislocation were observed in HAADF images. There was also evidence of the formation of large quantum dots at low densities from lattice HRTEM images. This was further confirmed by PL measurements through the observation of a single sharp line at low power with the typical saturation behaviour at higher power excitation. © 2010 IOP Publishing Ltd.
    Original languageEnglish
    Title of host publicationJournal of Physics: Conference Series|J. Phys. Conf. Ser.
    PublisherIOP Publishing Ltd
    Publication statusPublished - 2010
    EventEMAG 2009 - Sheffield
    Duration: 1 Jan 1824 → …


    ConferenceEMAG 2009
    Period1/01/24 → …


    • InGaN quantum dots, TEM, PL


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