Study of InGaN/GaN quantum dot systems by TEM techniques and photoluminescence spectroscopy

R. J. Kashtiban; U. Bangert; B. Sherliker; M. P. Halsall; A. J. Harvey

doi:10.1088/1742-6596/209/1/012038

Study of InGaN/GaN quantum dot systems by TEM techniques and photoluminescence spectroscopy

R. J. Kashtiban, U. Bangert, B. Sherliker, M. P. Halsall, A. J. Harvey

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

InGaN/GaN multilayer quantum dot structures produced by MOCVD techniques on c-plane sapphire were studied by transmission electron microscopy (TEM) and photoluminescence (PL) techniques. Indium fluctuations ranging from 1-4 nm were observed with both energy filtered TEM (EFTEM) and high angle annular dark field (HAADF) scanning TEM. The existence of V-shaped defects with nucleation centres at the termination of threading dislocation were observed in HAADF images. There was also evidence of the formation of large quantum dots at low densities from lattice HRTEM images. This was further confirmed by PL measurements through the observation of a single sharp line at low power with the typical saturation behaviour at higher power excitation. © 2010 IOP Publishing Ltd.

Original language	English
Title of host publication	Journal of Physics: Conference Series\|J. Phys. Conf. Ser.
Publisher	IOP Publishing Ltd
Volume	209
DOIs	https://doi.org/10.1088/1742-6596/209/1/012038
Publication status	Published - 2010
Event	EMAG 2009 - Sheffield Duration: 1 Jan 1824 → …

Conference

Conference	EMAG 2009
City	Sheffield
Period	1/01/24 → …

Keywords

InGaN quantum dots, TEM, PL

Access to Document

10.1088/1742-6596/209/1/012038

Cite this

@inproceedings{bd3c1a1b63554d558cfca1345c95de2a,

title = "Study of InGaN/GaN quantum dot systems by TEM techniques and photoluminescence spectroscopy",

abstract = "InGaN/GaN multilayer quantum dot structures produced by MOCVD techniques on c-plane sapphire were studied by transmission electron microscopy (TEM) and photoluminescence (PL) techniques. Indium fluctuations ranging from 1-4 nm were observed with both energy filtered TEM (EFTEM) and high angle annular dark field (HAADF) scanning TEM. The existence of V-shaped defects with nucleation centres at the termination of threading dislocation were observed in HAADF images. There was also evidence of the formation of large quantum dots at low densities from lattice HRTEM images. This was further confirmed by PL measurements through the observation of a single sharp line at low power with the typical saturation behaviour at higher power excitation. {\textcopyright} 2010 IOP Publishing Ltd.",

keywords = "InGaN quantum dots, TEM, PL",

author = "Kashtiban, {R. J.} and U. Bangert and B. Sherliker and Halsall, {M. P.} and Harvey, {A. J.}",

year = "2010",

doi = "10.1088/1742-6596/209/1/012038",

language = "English",

volume = "209",

booktitle = "Journal of Physics: Conference Series|J. Phys. Conf. Ser.",

publisher = "IOP Publishing Ltd",

address = "United Kingdom",

note = "EMAG 2009 ; Conference date: 01-01-1824",

}

TY - GEN

T1 - Study of InGaN/GaN quantum dot systems by TEM techniques and photoluminescence spectroscopy

AU - Kashtiban, R. J.

AU - Bangert, U.

AU - Sherliker, B.

AU - Halsall, M. P.

AU - Harvey, A. J.

PY - 2010

Y1 - 2010

N2 - InGaN/GaN multilayer quantum dot structures produced by MOCVD techniques on c-plane sapphire were studied by transmission electron microscopy (TEM) and photoluminescence (PL) techniques. Indium fluctuations ranging from 1-4 nm were observed with both energy filtered TEM (EFTEM) and high angle annular dark field (HAADF) scanning TEM. The existence of V-shaped defects with nucleation centres at the termination of threading dislocation were observed in HAADF images. There was also evidence of the formation of large quantum dots at low densities from lattice HRTEM images. This was further confirmed by PL measurements through the observation of a single sharp line at low power with the typical saturation behaviour at higher power excitation. © 2010 IOP Publishing Ltd.

AB - InGaN/GaN multilayer quantum dot structures produced by MOCVD techniques on c-plane sapphire were studied by transmission electron microscopy (TEM) and photoluminescence (PL) techniques. Indium fluctuations ranging from 1-4 nm were observed with both energy filtered TEM (EFTEM) and high angle annular dark field (HAADF) scanning TEM. The existence of V-shaped defects with nucleation centres at the termination of threading dislocation were observed in HAADF images. There was also evidence of the formation of large quantum dots at low densities from lattice HRTEM images. This was further confirmed by PL measurements through the observation of a single sharp line at low power with the typical saturation behaviour at higher power excitation. © 2010 IOP Publishing Ltd.

KW - InGaN quantum dots, TEM, PL

U2 - 10.1088/1742-6596/209/1/012038

DO - 10.1088/1742-6596/209/1/012038

M3 - Conference contribution

VL - 209

BT - Journal of Physics: Conference Series|J. Phys. Conf. Ser.

PB - IOP Publishing Ltd

T2 - EMAG 2009

Y2 - 1 January 1824

ER -

Study of InGaN/GaN quantum dot systems by TEM techniques and photoluminescence spectroscopy

Abstract

Conference

Keywords

Access to Document

Fingerprint

Cite this