TY - GEN
T1 - Study of THz oscillations in GaN-based planar nanodevices
AU - Xu, K.Y.
AU - Song, A.M.
AU - Chen, Z.M.
AU - Zheng, Z.Y.
AU - Wang, G.
PY - 2010
Y1 - 2010
N2 - The feasibility of THz oscillations in a GaN-based planar nanoscale unipolar diode, or a self-switching device (SSD), is analyzed using Monte Carlo simulations. The origin of THz oscillations is contributed to Gunn-effect. The dependence of the Gunn oscillations on geometric parameters and bias conditions has been studied. By using proper parameters, the oscillation frequency can reach 0.6 THz. Moreover, potential applications are discussed in terms of the ease of heat dissipation and generation of oscillations at different frequencies on a single chip, in contrast to a conventional vertical-structure Gunn diode.
AB - The feasibility of THz oscillations in a GaN-based planar nanoscale unipolar diode, or a self-switching device (SSD), is analyzed using Monte Carlo simulations. The origin of THz oscillations is contributed to Gunn-effect. The dependence of the Gunn oscillations on geometric parameters and bias conditions has been studied. By using proper parameters, the oscillation frequency can reach 0.6 THz. Moreover, potential applications are discussed in terms of the ease of heat dissipation and generation of oscillations at different frequencies on a single chip, in contrast to a conventional vertical-structure Gunn diode.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-77954939238&partnerID=MN8TOARS
U2 - 10.1109/SOPO.2010.5504333
DO - 10.1109/SOPO.2010.5504333
M3 - Conference contribution
BT - 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings
ER -