Study of THz oscillations in GaN-based planar nanodevices

K.Y. Xu, A.M. Song, Z.M. Chen, Z.Y. Zheng, G. Wang

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

Abstract

The feasibility of THz oscillations in a GaN-based planar nanoscale unipolar diode, or a self-switching device (SSD), is analyzed using Monte Carlo simulations. The origin of THz oscillations is contributed to Gunn-effect. The dependence of the Gunn oscillations on geometric parameters and bias conditions has been studied. By using proper parameters, the oscillation frequency can reach 0.6 THz. Moreover, potential applications are discussed in terms of the ease of heat dissipation and generation of oscillations at different frequencies on a single chip, in contrast to a conventional vertical-structure Gunn diode.
Original languageUndefined
Title of host publication2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings
DOIs
Publication statusPublished - 2010

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