Study of THz oscillations in GaN-based planar nanodevices

K.Y. Xu; A.M. Song; Z.M. Chen; Z.Y. Zheng; G. Wang

doi:10.1109/SOPO.2010.5504333

Study of THz oscillations in GaN-based planar nanodevices

K.Y. Xu
, A.M. Song
, Z.M. Chen
, Z.Y. Zheng
, G. Wang

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

The feasibility of THz oscillations in a GaN-based planar nanoscale unipolar diode, or a self-switching device (SSD), is analyzed using Monte Carlo simulations. The origin of THz oscillations is contributed to Gunn-effect. The dependence of the Gunn oscillations on geometric parameters and bias conditions has been studied. By using proper parameters, the oscillation frequency can reach 0.6 THz. Moreover, potential applications are discussed in terms of the ease of heat dissipation and generation of oscillations at different frequencies on a single chip, in contrast to a conventional vertical-structure Gunn diode.

Original language	Undefined
Title of host publication	2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings
DOIs	https://doi.org/10.1109/SOPO.2010.5504333
Publication status	Published - 2010

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10.1109/SOPO.2010.5504333

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title = "Study of THz oscillations in GaN-based planar nanodevices",

abstract = "The feasibility of THz oscillations in a GaN-based planar nanoscale unipolar diode, or a self-switching device (SSD), is analyzed using Monte Carlo simulations. The origin of THz oscillations is contributed to Gunn-effect. The dependence of the Gunn oscillations on geometric parameters and bias conditions has been studied. By using proper parameters, the oscillation frequency can reach 0.6 THz. Moreover, potential applications are discussed in terms of the ease of heat dissipation and generation of oscillations at different frequencies on a single chip, in contrast to a conventional vertical-structure Gunn diode.",

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year = "2010",

doi = "10.1109/SOPO.2010.5504333",

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T1 - Study of THz oscillations in GaN-based planar nanodevices

AU - Xu, K.Y.

AU - Song, A.M.

AU - Chen, Z.M.

AU - Zheng, Z.Y.

AU - Wang, G.

PY - 2010

Y1 - 2010

N2 - The feasibility of THz oscillations in a GaN-based planar nanoscale unipolar diode, or a self-switching device (SSD), is analyzed using Monte Carlo simulations. The origin of THz oscillations is contributed to Gunn-effect. The dependence of the Gunn oscillations on geometric parameters and bias conditions has been studied. By using proper parameters, the oscillation frequency can reach 0.6 THz. Moreover, potential applications are discussed in terms of the ease of heat dissipation and generation of oscillations at different frequencies on a single chip, in contrast to a conventional vertical-structure Gunn diode.

AB - The feasibility of THz oscillations in a GaN-based planar nanoscale unipolar diode, or a self-switching device (SSD), is analyzed using Monte Carlo simulations. The origin of THz oscillations is contributed to Gunn-effect. The dependence of the Gunn oscillations on geometric parameters and bias conditions has been studied. By using proper parameters, the oscillation frequency can reach 0.6 THz. Moreover, potential applications are discussed in terms of the ease of heat dissipation and generation of oscillations at different frequencies on a single chip, in contrast to a conventional vertical-structure Gunn diode.

UR - https://www.scopus.com/pages/publications/77954939238

U2 - 10.1109/SOPO.2010.5504333

DO - 10.1109/SOPO.2010.5504333

M3 - Conference contribution

BT - 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings

ER -

Study of THz oscillations in GaN-based planar nanodevices

Abstract

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