Sub-0.5 dB NF broadband low-noise amplifier using a novel InGaAs/InAlAs/InP pHEMT

B. Boudjelida; A. Sobih; S. Arshad; A. Bouloukou; S. Boulay; J. Sly; M. Missous

doi:10.1109/ASDAM.2008.4743362

Sub-0.5 dB NF broadband low-noise amplifier using a novel InGaAs/InAlAs/InP pHEMT

B. Boudjelida, A. Sobih, S. Arshad, A. Bouloukou, S. Boulay, J. Sly, M. Missous

Research output: Chapter in Book/Conference proceeding › Conference contribution

Abstract

Linear and non-linear modelling of a novel ultra-low noise InGaAs/InAlAs pHEMTs have been used to design a low noise amplifier operating from 0.3 to 2 GHz. The LNA has ∼ 0.4 dB NF across the whole frequency band, power gain of 26 dB at 1.4 GHz and IP 3 of 14 dBm, making it a good candidate for the aperture array concept of the Square Kilometre Array (SKA) telescope, GSM, GPS, civil and military DAB. © 2008 IEEE.

Original language	English
Title of host publication	ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems\|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems
Pages	75-78
Number of pages	3
DOIs	https://doi.org/10.1109/ASDAM.2008.4743362
Publication status	Published - 2008
Event	7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008 - Smolenice Duration: 1 Jul 2008 → … http://<Go to ISI>://000263223200047

Conference

Conference	7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008
City	Smolenice
Period	1/07/08 → …
Internet address	http://<Go to ISI>://000263223200047

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10.1109/ASDAM.2008.4743362

Cite this

Boudjelida, B., Sobih, A., Arshad, S., Bouloukou, A., Boulay, S., Sly, J., & Missous, M. (2008). Sub-0.5 dB NF broadband low-noise amplifier using a novel InGaAs/InAlAs/InP pHEMT. In ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems (pp. 75-78) https://doi.org/10.1109/ASDAM.2008.4743362

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title = "Sub-0.5 dB NF broadband low-noise amplifier using a novel InGaAs/InAlAs/InP pHEMT",

abstract = "Linear and non-linear modelling of a novel ultra-low noise InGaAs/InAlAs pHEMTs have been used to design a low noise amplifier operating from 0.3 to 2 GHz. The LNA has ∼ 0.4 dB NF across the whole frequency band, power gain of 26 dB at 1.4 GHz and IP 3 of 14 dBm, making it a good candidate for the aperture array concept of the Square Kilometre Array (SKA) telescope, GSM, GPS, civil and military DAB. {\textcopyright} 2008 IEEE.",

author = "B. Boudjelida and A. Sobih and S. Arshad and A. Bouloukou and S. Boulay and J. Sly and M. Missous",

note = "Boudjelida, B. Sobih, A. Arshad, S. Bouloukou, A. Boulay, S. Sly, J. Missous, M.; 7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008 ; Conference date: 01-07-2008",

year = "2008",

doi = "10.1109/ASDAM.2008.4743362",

language = "English",

isbn = "9781424423262",

pages = "75--78",

booktitle = "ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems",

url = "http://<Go to ISI>://000263223200047",

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Boudjelida, B, Sobih, A, Arshad, S, Bouloukou, A, Boulay, S, Sly, J & Missous, M 2008, Sub-0.5 dB NF broadband low-noise amplifier using a novel InGaAs/InAlAs/InP pHEMT. in ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems. pp. 75-78, 7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008, Smolenice, 1/07/08. https://doi.org/10.1109/ASDAM.2008.4743362

Sub-0.5 dB NF broadband low-noise amplifier using a novel InGaAs/InAlAs/InP pHEMT. / Boudjelida, B.; Sobih, A.; Arshad, S. et al.
ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems. 2008. p. 75-78.

Research output: Chapter in Book/Conference proceeding › Conference contribution

TY - GEN

T1 - Sub-0.5 dB NF broadband low-noise amplifier using a novel InGaAs/InAlAs/InP pHEMT

AU - Boudjelida, B.

AU - Sobih, A.

AU - Arshad, S.

AU - Bouloukou, A.

AU - Boulay, S.

AU - Sly, J.

AU - Missous, M.

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N2 - Linear and non-linear modelling of a novel ultra-low noise InGaAs/InAlAs pHEMTs have been used to design a low noise amplifier operating from 0.3 to 2 GHz. The LNA has ∼ 0.4 dB NF across the whole frequency band, power gain of 26 dB at 1.4 GHz and IP 3 of 14 dBm, making it a good candidate for the aperture array concept of the Square Kilometre Array (SKA) telescope, GSM, GPS, civil and military DAB. © 2008 IEEE.

AB - Linear and non-linear modelling of a novel ultra-low noise InGaAs/InAlAs pHEMTs have been used to design a low noise amplifier operating from 0.3 to 2 GHz. The LNA has ∼ 0.4 dB NF across the whole frequency band, power gain of 26 dB at 1.4 GHz and IP 3 of 14 dBm, making it a good candidate for the aperture array concept of the Square Kilometre Array (SKA) telescope, GSM, GPS, civil and military DAB. © 2008 IEEE.

U2 - 10.1109/ASDAM.2008.4743362

DO - 10.1109/ASDAM.2008.4743362

M3 - Conference contribution

SN - 9781424423262

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BT - ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems

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ER -

Boudjelida B, Sobih A, Arshad S, Bouloukou A, Boulay S, Sly J et al. Sub-0.5 dB NF broadband low-noise amplifier using a novel InGaAs/InAlAs/InP pHEMT. In ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems. 2008. p. 75-78 doi: 10.1109/ASDAM.2008.4743362

Sub-0.5 dB NF broadband low-noise amplifier using a novel InGaAs/InAlAs/InP pHEMT

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