Subband nonparabolicity estimated from multiple intersubband absorption in highly doped multiple quantum wells

R. Gupta; K. T. Lai; M. Missous; S. K. Haywood

doi:10.1103/PhysRevB.69.033303

Subband nonparabolicity estimated from multiple intersubband absorption in highly doped multiple quantum wells

R. Gupta, K. T. Lai, M. Missous, S. K. Haywood

EEE - Academic & Research

The University of Hull

Research output: Contribution to journal › Article › peer-review

Abstract

We report strong room-temperature intersubband absorption in 80 Å strain-compensated In_0.84Ga_0.16As/AlAs/In_0.52Al_0.48As double-barrier quantum wells grown on InP substrates. From the multiple Γ-Γ intersubband transitions observed, it is inferred that the electron effective masses and nonparabolicity parameters for the first two subbands differ significantly from each other. For the range k∼5×10⁶−6×10⁶cm⁻¹, the difference in subband parameters results in a change in transition energy of about twice the value calculated for the corresponding GaAs/AlGaAs quantum well.

Original language	English
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	69
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.69.033303
Publication status	Published - 28 Jan 2004

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title = "Subband nonparabolicity estimated from multiple intersubband absorption in highly doped multiple quantum wells",

abstract = "We report strong room-temperature intersubband absorption in 80 {\AA} strain-compensated In0.84Ga0.16As/AlAs/In0.52Al0.48As double-barrier quantum wells grown on InP substrates. From the multiple Γ-Γ intersubband transitions observed, it is inferred that the electron effective masses and nonparabolicity parameters for the first two subbands differ significantly from each other. For the range k∼5×106−6×106cm−1, the difference in subband parameters results in a change in transition energy of about twice the value calculated for the corresponding GaAs/AlGaAs quantum well.",

author = "R. Gupta and Lai, \{K. T.\} and M. Missous and Haywood, \{S. K.\}",

year = "2004",

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doi = "10.1103/PhysRevB.69.033303",

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AU - Gupta, R.

AU - Lai, K. T.

AU - Missous, M.

AU - Haywood, S. K.

PY - 2004/1/28

Y1 - 2004/1/28

N2 - We report strong room-temperature intersubband absorption in 80 Å strain-compensated In0.84Ga0.16As/AlAs/In0.52Al0.48As double-barrier quantum wells grown on InP substrates. From the multiple Γ-Γ intersubband transitions observed, it is inferred that the electron effective masses and nonparabolicity parameters for the first two subbands differ significantly from each other. For the range k∼5×106−6×106cm−1, the difference in subband parameters results in a change in transition energy of about twice the value calculated for the corresponding GaAs/AlGaAs quantum well.

AB - We report strong room-temperature intersubband absorption in 80 Å strain-compensated In0.84Ga0.16As/AlAs/In0.52Al0.48As double-barrier quantum wells grown on InP substrates. From the multiple Γ-Γ intersubband transitions observed, it is inferred that the electron effective masses and nonparabolicity parameters for the first two subbands differ significantly from each other. For the range k∼5×106−6×106cm−1, the difference in subband parameters results in a change in transition energy of about twice the value calculated for the corresponding GaAs/AlGaAs quantum well.

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DO - 10.1103/PhysRevB.69.033303

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 3

ER -

Subband nonparabolicity estimated from multiple intersubband absorption in highly doped multiple quantum wells

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