Superconducting Dome in a Gate-Tuned Band Insulator

J. T. Ye, Y. J. Zhang, R. Akashi, M. S. Bahramy, R. Arita, Y. Iwasa

Research output: Contribution to journalArticlepeer-review

Abstract

A dome-shaped superconducting region appears in the phase diagrams of many unconventional superconductors. In doped band insulators, however, reaching optimal superconductivity by the fine-tuning of carriers has seldom been seen. We report the observation of a superconducting dome in the temperature–carrier density phase diagram of MoS2, an archetypal band insulator. By quasi-continuous electrostatic carrier doping achieved through a combination of liquid and solid gating, we revealed a large enhancement in the transition temperatureTc occurring at optimal doping in the chemically inaccessible low–carrier density regime. This observation indicates that the superconducting dome may arise even in doped band insulators.
Original languageEnglish
Pages (from-to)1193-1196
Number of pages4
JournalScience
Volume338
Issue number6111
DOIs
Publication statusPublished - 30 Nov 2012

Fingerprint

Dive into the research topics of 'Superconducting Dome in a Gate-Tuned Band Insulator'. Together they form a unique fingerprint.

Cite this