Surface elemental segregation and the Stranski-Krastanow epitaxial islanding transition

A. G. Cullis; D. J. Norris; M. A. Migliorato; M. Hopkinson

doi:10.1016/j.apsusc.2004.10.066

Surface elemental segregation and the Stranski-Krastanow epitaxial islanding transition

A. G. Cullis, D. J. Norris, M. A. Migliorato, M. Hopkinson

Research output: Contribution to journal › Article › peer-review

Abstract

It is shown that a new segregation-based mechanism underpins the Stranski-Krastanow (S-K) epitaxial islanding transition in both the In xGa1-xAs/GaAs and Si1-xGex/Si systems over wide ranges of growth conditions. Quantitative segregation calculations allow critical 'wetting' layer thicknesses to be derived and, for the InxGa1-xAs/GaAs system (x = 0.25-1), such calculations show good agreement with experimental measurements. The segregation-mediated driving force is considered to be important, also, for all other epitaxial systems which comprise chemically similar but substantially misfitting materials and which exhibit the S-K transition. © 2004 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	65-70
Number of pages	5
Journal	Applied Surface Science
Volume	244
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2004.10.066
Publication status	Published - 15 May 2005

Keywords

Epitaxy
Islanding transition
Quantum dot
Stranski-Krastanow transition

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10.1016/j.apsusc.2004.10.066

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title = "Surface elemental segregation and the Stranski-Krastanow epitaxial islanding transition",

abstract = "It is shown that a new segregation-based mechanism underpins the Stranski-Krastanow (S-K) epitaxial islanding transition in both the In xGa1-xAs/GaAs and Si1-xGex/Si systems over wide ranges of growth conditions. Quantitative segregation calculations allow critical 'wetting' layer thicknesses to be derived and, for the InxGa1-xAs/GaAs system (x = 0.25-1), such calculations show good agreement with experimental measurements. The segregation-mediated driving force is considered to be important, also, for all other epitaxial systems which comprise chemically similar but substantially misfitting materials and which exhibit the S-K transition. {\textcopyright} 2004 Elsevier B.V. All rights reserved.",

keywords = "Epitaxy, Islanding transition, Quantum dot, Stranski-Krastanow transition",

author = "Cullis, \{A. G.\} and Norris, \{D. J.\} and Migliorato, \{M. A.\} and M. Hopkinson",

note = "Times Cited: 12 12th International Conference on Solid Films and Surfaces (ICSFS-12) JUN 21-25, 2004 Hamamatsu, JAPAN Suzuki Motor Corp; Murata Sci Fdn; Shizuoka Univ Fund Engn Res; Promotion Elect Engn Hamamatsu; Hamamatsu Visitors \& Convent Bur",

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doi = "10.1016/j.apsusc.2004.10.066",

language = "English",

volume = "244",

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journal = "Applied Surface Science",

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T1 - Surface elemental segregation and the Stranski-Krastanow epitaxial islanding transition

AU - Cullis, A. G.

AU - Norris, D. J.

AU - Migliorato, M. A.

AU - Hopkinson, M.

N1 - Times Cited: 12 12th International Conference on Solid Films and Surfaces (ICSFS-12) JUN 21-25, 2004 Hamamatsu, JAPAN Suzuki Motor Corp; Murata Sci Fdn; Shizuoka Univ Fund Engn Res; Promotion Elect Engn Hamamatsu; Hamamatsu Visitors & Convent Bur

PY - 2005/5/15

Y1 - 2005/5/15

N2 - It is shown that a new segregation-based mechanism underpins the Stranski-Krastanow (S-K) epitaxial islanding transition in both the In xGa1-xAs/GaAs and Si1-xGex/Si systems over wide ranges of growth conditions. Quantitative segregation calculations allow critical 'wetting' layer thicknesses to be derived and, for the InxGa1-xAs/GaAs system (x = 0.25-1), such calculations show good agreement with experimental measurements. The segregation-mediated driving force is considered to be important, also, for all other epitaxial systems which comprise chemically similar but substantially misfitting materials and which exhibit the S-K transition. © 2004 Elsevier B.V. All rights reserved.

AB - It is shown that a new segregation-based mechanism underpins the Stranski-Krastanow (S-K) epitaxial islanding transition in both the In xGa1-xAs/GaAs and Si1-xGex/Si systems over wide ranges of growth conditions. Quantitative segregation calculations allow critical 'wetting' layer thicknesses to be derived and, for the InxGa1-xAs/GaAs system (x = 0.25-1), such calculations show good agreement with experimental measurements. The segregation-mediated driving force is considered to be important, also, for all other epitaxial systems which comprise chemically similar but substantially misfitting materials and which exhibit the S-K transition. © 2004 Elsevier B.V. All rights reserved.

KW - Epitaxy

KW - Islanding transition

KW - Quantum dot

KW - Stranski-Krastanow transition

UR - https://www.scopus.com/pages/publications/15844424216

U2 - 10.1016/j.apsusc.2004.10.066

DO - 10.1016/j.apsusc.2004.10.066

M3 - Article

SN - 0169-4332

VL - 244

SP - 65

EP - 70

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Surface elemental segregation and the Stranski-Krastanow epitaxial islanding transition

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Keywords

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