Surfactant-mediated growth of InAs-GaAs superlattices and quantum dot structures grown at different temperatures

M. Alduraibi; C. Mitchell; S. Chakraborty; M. Missous

doi:10.1016/j.mejo.2008.06.055

Surfactant-mediated growth of InAs-GaAs superlattices and quantum dot structures grown at different temperatures

M. Alduraibi, C. Mitchell, S. Chakraborty, M. Missous

Research output: Contribution to journal › Article › peer-review

Abstract

The structural and optical qualities of superlattice InAs-GaAs structures and quantum dots (QDs), grown by molecular beam epitaxy (MBE) at low (250 °C) and normal (∼450 °C) growth temperatures, have been investigated. The InAs layers (3 monolayers) were grown under conditions where only the indium beam impinged upon the growth surface (surfactant growth mode). This growth mode still resulted in the formation of QDs at normal growth temperatures, but with dot sizes that were much smaller than those for "normal" growth of 3 ML InAs-GaAs QD structures. In addition, at low temperature under such "arsenic-free" conditions a very high quality InAs-GaAs superlattice structure with 3 ML of InAs was formed, as demonstrated by transmission electron microscopy (TEM). This is a direct confirmation that the critical thickness of InAs can be extended well beyond the 1.7 ML limit seen at higher growth temperatures. © 2008 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	476-478
Number of pages	2
Journal	Microelectronics Journal
Volume	40
Issue number	3
DOIs	https://doi.org/10.1016/j.mejo.2008.06.055
Publication status	Published - Mar 2009

Keywords

Low-temperature growth
Molecular beam epitaxy
Quantum dots
Surfactant growth

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10.1016/j.mejo.2008.06.055

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title = "Surfactant-mediated growth of InAs-GaAs superlattices and quantum dot structures grown at different temperatures",

abstract = "The structural and optical qualities of superlattice InAs-GaAs structures and quantum dots (QDs), grown by molecular beam epitaxy (MBE) at low (250 °C) and normal (∼450 °C) growth temperatures, have been investigated. The InAs layers (3 monolayers) were grown under conditions where only the indium beam impinged upon the growth surface (surfactant growth mode). This growth mode still resulted in the formation of QDs at normal growth temperatures, but with dot sizes that were much smaller than those for {"}normal{"} growth of 3 ML InAs-GaAs QD structures. In addition, at low temperature under such {"}arsenic-free{"} conditions a very high quality InAs-GaAs superlattice structure with 3 ML of InAs was formed, as demonstrated by transmission electron microscopy (TEM). This is a direct confirmation that the critical thickness of InAs can be extended well beyond the 1.7 ML limit seen at higher growth temperatures. {\textcopyright} 2008 Elsevier Ltd. All rights reserved.",

keywords = "Low-temperature growth, Molecular beam epitaxy, Quantum dots, Surfactant growth",

author = "M. Alduraibi and C. Mitchell and S. Chakraborty and M. Missous",

year = "2009",

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T1 - Surfactant-mediated growth of InAs-GaAs superlattices and quantum dot structures grown at different temperatures

AU - Alduraibi, M.

AU - Mitchell, C.

AU - Chakraborty, S.

AU - Missous, M.

PY - 2009/3

Y1 - 2009/3

N2 - The structural and optical qualities of superlattice InAs-GaAs structures and quantum dots (QDs), grown by molecular beam epitaxy (MBE) at low (250 °C) and normal (∼450 °C) growth temperatures, have been investigated. The InAs layers (3 monolayers) were grown under conditions where only the indium beam impinged upon the growth surface (surfactant growth mode). This growth mode still resulted in the formation of QDs at normal growth temperatures, but with dot sizes that were much smaller than those for "normal" growth of 3 ML InAs-GaAs QD structures. In addition, at low temperature under such "arsenic-free" conditions a very high quality InAs-GaAs superlattice structure with 3 ML of InAs was formed, as demonstrated by transmission electron microscopy (TEM). This is a direct confirmation that the critical thickness of InAs can be extended well beyond the 1.7 ML limit seen at higher growth temperatures. © 2008 Elsevier Ltd. All rights reserved.

AB - The structural and optical qualities of superlattice InAs-GaAs structures and quantum dots (QDs), grown by molecular beam epitaxy (MBE) at low (250 °C) and normal (∼450 °C) growth temperatures, have been investigated. The InAs layers (3 monolayers) were grown under conditions where only the indium beam impinged upon the growth surface (surfactant growth mode). This growth mode still resulted in the formation of QDs at normal growth temperatures, but with dot sizes that were much smaller than those for "normal" growth of 3 ML InAs-GaAs QD structures. In addition, at low temperature under such "arsenic-free" conditions a very high quality InAs-GaAs superlattice structure with 3 ML of InAs was formed, as demonstrated by transmission electron microscopy (TEM). This is a direct confirmation that the critical thickness of InAs can be extended well beyond the 1.7 ML limit seen at higher growth temperatures. © 2008 Elsevier Ltd. All rights reserved.

KW - Low-temperature growth

KW - Molecular beam epitaxy

KW - Quantum dots

KW - Surfactant growth

U2 - 10.1016/j.mejo.2008.06.055

DO - 10.1016/j.mejo.2008.06.055

M3 - Article

SN - 0026-2692

VL - 40

SP - 476

EP - 478

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 3

ER -

Surfactant-mediated growth of InAs-GaAs superlattices and quantum dot structures grown at different temperatures

Abstract

Keywords

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