TEM investigation of ion beam synthesized semiconducting FeSi2

Z. Yang; K. P. Homewood; K. J. Reeson; M. S. Finney; M. A. Harry

doi:10.1016/0167-577X(95)00049-6

TEM investigation of ion beam synthesized semiconducting FeSi2

Z. Yang^*, K. P. Homewood, K. J. Reeson, M. S. Finney, M. A. Harry

^*Corresponding author for this work

Division of Cancer Sciences (L5)

University of Surrey

Research output: Contribution to journal › Article › peer-review

Abstract

Both as-implanted and annealed semiconducting FeSi₂ samples fabricated using ion beam synthesis technique were studied by transmission electron microscopy. A continuous buried silicide layer with larger precipitates and sharper interfaces formed during annealing at 900 °C for 18 h. Different orientation relationships between the silicide grains and the silicon substrate were found. The existence of a large variety of parallel lattice plane pairs with the available small mismatches between the two phases results in these preferred orientation relationships.

Original language	English
Pages (from-to)	215-220
Number of pages	6
Journal	Materials Letters
Volume	23
Issue number	4-6
DOIs	https://doi.org/10.1016/0167-577X(95)00049-6
Publication status	Published - 1995

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title = "TEM investigation of ion beam synthesized semiconducting FeSi2",

abstract = "Both as-implanted and annealed semiconducting FeSi2 samples fabricated using ion beam synthesis technique were studied by transmission electron microscopy. A continuous buried silicide layer with larger precipitates and sharper interfaces formed during annealing at 900 °C for 18 h. Different orientation relationships between the silicide grains and the silicon substrate were found. The existence of a large variety of parallel lattice plane pairs with the available small mismatches between the two phases results in these preferred orientation relationships.",

author = "Z. Yang and Homewood, {K. P.} and Reeson, {K. J.} and Finney, {M. S.} and Harry, {M. A.}",

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T1 - TEM investigation of ion beam synthesized semiconducting FeSi2

AU - Yang, Z.

AU - Homewood, K. P.

AU - Reeson, K. J.

AU - Finney, M. S.

AU - Harry, M. A.

PY - 1995

Y1 - 1995

N2 - Both as-implanted and annealed semiconducting FeSi2 samples fabricated using ion beam synthesis technique were studied by transmission electron microscopy. A continuous buried silicide layer with larger precipitates and sharper interfaces formed during annealing at 900 °C for 18 h. Different orientation relationships between the silicide grains and the silicon substrate were found. The existence of a large variety of parallel lattice plane pairs with the available small mismatches between the two phases results in these preferred orientation relationships.

AB - Both as-implanted and annealed semiconducting FeSi2 samples fabricated using ion beam synthesis technique were studied by transmission electron microscopy. A continuous buried silicide layer with larger precipitates and sharper interfaces formed during annealing at 900 °C for 18 h. Different orientation relationships between the silicide grains and the silicon substrate were found. The existence of a large variety of parallel lattice plane pairs with the available small mismatches between the two phases results in these preferred orientation relationships.

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DO - 10.1016/0167-577X(95)00049-6

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VL - 23

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EP - 220

JO - Materials Letters

JF - Materials Letters

IS - 4-6

ER -

TEM investigation of ion beam synthesized semiconducting FeSi2

Abstract

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