Temperature characteristics of near-infrared (1.7 micron), resonant cavity light-emitting diodes

B. M. Poole; K. E. Singer; M. Missous

doi:10.1049/ip-opt:20000301

Temperature characteristics of near-infrared (1.7 micron), resonant cavity light-emitting diodes

B. M. Poole, K. E. Singer, M. Missous

UMIST

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Abstract

The design and operation of a near infra-red resonant cavity light-emitting diode operating at 1.7 microns with a 16 nm linewidth is described. The structure is based on a wafer-bonded combination of InGaAs/InAlAs/InP quantum well emitter and an AlAs/GaAs distributed Bragg reflector. Detailed temperature characteristics over a range from 80 to 373 K are presented. The temperature dependence of the main cavity mode emission wavelength is shown to be 0.15 nm/K. The intensity is found to increase with temperature from 80 to 325 K and thereafter decrease. There is a 20 degree range in which the intensity is constant within approximately 5%. A model is suggested for this behaviour.

Original language	English
Pages (from-to)	22-26
Number of pages	5
Journal	IEE Proceedings: Optoelectronics
Volume	147
Issue number	1
DOIs	https://doi.org/10.1049/ip-opt:20000301
Publication status	Published - 1 Jan 2000

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abstract = "The design and operation of a near infra-red resonant cavity light-emitting diode operating at 1.7 microns with a 16 nm linewidth is described. The structure is based on a wafer-bonded combination of InGaAs/InAlAs/InP quantum well emitter and an AlAs/GaAs distributed Bragg reflector. Detailed temperature characteristics over a range from 80 to 373 K are presented. The temperature dependence of the main cavity mode emission wavelength is shown to be 0.15 nm/K. The intensity is found to increase with temperature from 80 to 325 K and thereafter decrease. There is a 20 degree range in which the intensity is constant within approximately 5%. A model is suggested for this behaviour.",

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AU - Singer, K. E.

AU - Missous, M.

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Y1 - 2000/1/1

N2 - The design and operation of a near infra-red resonant cavity light-emitting diode operating at 1.7 microns with a 16 nm linewidth is described. The structure is based on a wafer-bonded combination of InGaAs/InAlAs/InP quantum well emitter and an AlAs/GaAs distributed Bragg reflector. Detailed temperature characteristics over a range from 80 to 373 K are presented. The temperature dependence of the main cavity mode emission wavelength is shown to be 0.15 nm/K. The intensity is found to increase with temperature from 80 to 325 K and thereafter decrease. There is a 20 degree range in which the intensity is constant within approximately 5%. A model is suggested for this behaviour.

AB - The design and operation of a near infra-red resonant cavity light-emitting diode operating at 1.7 microns with a 16 nm linewidth is described. The structure is based on a wafer-bonded combination of InGaAs/InAlAs/InP quantum well emitter and an AlAs/GaAs distributed Bragg reflector. Detailed temperature characteristics over a range from 80 to 373 K are presented. The temperature dependence of the main cavity mode emission wavelength is shown to be 0.15 nm/K. The intensity is found to increase with temperature from 80 to 325 K and thereafter decrease. There is a 20 degree range in which the intensity is constant within approximately 5%. A model is suggested for this behaviour.

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JO - IEE Proceedings: Optoelectronics

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Temperature characteristics of near-infrared (1.7 micron), resonant cavity light-emitting diodes

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