Temperature dependence characteristics of In0.53Ga0.47As/AlAs asymmetric spacer-layer tunnel (ASPAT) diode detectors

Yuekun Wang; Mohd Rashid Redza Abdullah; James Sexton; Mohamed Missous

doi:10.1109/UCMMT.2015.7460589

Temperature dependence characteristics of In_0.53Ga_0.47As/AlAs asymmetric spacer-layer tunnel (ASPAT) diode detectors

Yuekun Wang, Mohd Rashid Redza Abdullah, James Sexton, Mohamed Missous

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A novel single-barrier In_0.53Ga_0.47As-AlAs tunnel diodes with asymmetric spacer layers for millimetre and THz detection were designed and fabricated. These devices meet the requirements of detectors with a much weaker temperature dependence than Schottky diodes. The I-V measurements over the temperature range 77K to 400K revealed temperature independency of the diode's characteristics within this wide range. The DC properties and the temperature dependence characteristics of this In_0.53Ga_0.47As/AlAs ASPAT diodes are presented for the first time and the temperature dependency of the new ASPAT diodes are found to be superior to those of conventional GaAs/AlAs ASPAT diodes.

Original language	English
Title of host publication	2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015
Publisher	IEEE
ISBN (Electronic)	9781467374347
DOIs	https://doi.org/10.1109/UCMMT.2015.7460589
Publication status	Published - 26 Apr 2016
Event	8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015 - Cardiff, United Kingdom Duration: 14 Sept 2015 → 15 Sept 2015

Conference

Conference	8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015
Country/Territory	United Kingdom
City	Cardiff
Period	14/09/15 → 15/09/15

Keywords

InGaAs/AlAs ASPAT diode
mmvave/THz electronics
temperature dependence

Access to Document

10.1109/UCMMT.2015.7460589

Cite this

@inproceedings{f032c36a5a41494ca66b72b549037ff0,

title = "Temperature dependence characteristics of In0.53Ga0.47As/AlAs asymmetric spacer-layer tunnel (ASPAT) diode detectors",

abstract = "A novel single-barrier In0.53Ga0.47As-AlAs tunnel diodes with asymmetric spacer layers for millimetre and THz detection were designed and fabricated. These devices meet the requirements of detectors with a much weaker temperature dependence than Schottky diodes. The I-V measurements over the temperature range 77K to 400K revealed temperature independency of the diode's characteristics within this wide range. The DC properties and the temperature dependence characteristics of this In0.53Ga0.47As/AlAs ASPAT diodes are presented for the first time and the temperature dependency of the new ASPAT diodes are found to be superior to those of conventional GaAs/AlAs ASPAT diodes.",

keywords = "InGaAs/AlAs ASPAT diode, mmvave/THz electronics, temperature dependence",

author = "Yuekun Wang and Abdullah, {Mohd Rashid Redza} and James Sexton and Mohamed Missous",

year = "2016",

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day = "26",

doi = "10.1109/UCMMT.2015.7460589",

language = "English",

booktitle = "2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015",

publisher = "IEEE",

address = "United States",

note = "8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015 ; Conference date: 14-09-2015 Through 15-09-2015",

}

Wang, Y, Abdullah, MRR, Sexton, J & Missous, M 2016, Temperature dependence characteristics of In_0.53Ga_0.47As/AlAs asymmetric spacer-layer tunnel (ASPAT) diode detectors. in 2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015., 7460589, IEEE, 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015, Cardiff, United Kingdom, 14/09/15. https://doi.org/10.1109/UCMMT.2015.7460589

Temperature dependence characteristics of In_0.53Ga_0.47As/AlAs asymmetric spacer-layer tunnel (ASPAT) diode detectors. / Wang, Yuekun; Abdullah, Mohd Rashid Redza; Sexton, James et al.
2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015. IEEE, 2016. 7460589.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - A novel single-barrier In0.53Ga0.47As-AlAs tunnel diodes with asymmetric spacer layers for millimetre and THz detection were designed and fabricated. These devices meet the requirements of detectors with a much weaker temperature dependence than Schottky diodes. The I-V measurements over the temperature range 77K to 400K revealed temperature independency of the diode's characteristics within this wide range. The DC properties and the temperature dependence characteristics of this In0.53Ga0.47As/AlAs ASPAT diodes are presented for the first time and the temperature dependency of the new ASPAT diodes are found to be superior to those of conventional GaAs/AlAs ASPAT diodes.

AB - A novel single-barrier In0.53Ga0.47As-AlAs tunnel diodes with asymmetric spacer layers for millimetre and THz detection were designed and fabricated. These devices meet the requirements of detectors with a much weaker temperature dependence than Schottky diodes. The I-V measurements over the temperature range 77K to 400K revealed temperature independency of the diode's characteristics within this wide range. The DC properties and the temperature dependence characteristics of this In0.53Ga0.47As/AlAs ASPAT diodes are presented for the first time and the temperature dependency of the new ASPAT diodes are found to be superior to those of conventional GaAs/AlAs ASPAT diodes.

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