Abstract
We study the temperature dependence of electron emission from self‐assembled InAs/GaAs quantum dots. A theoretical treatment for electron thermal and tunneling emissions from quantum dots is performed to achieve the “effective emission rate” according to the experimentally obtained quantities. The dominant emission mechanism is found to vary as the temperature decreases.
Original language | Undefined |
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Title of host publication | AIP Conference Proceedings |
Pages | 375–376 |
Number of pages | 2 |
DOIs | |
Publication status | Published - 2011 |