Temperature dependence of peak heights in deep-level transient spectroscopy

P. I. Rockett; A. R. Peaker

doi:10.1049/el:19810583

Temperature dependence of peak heights in deep-level transient spectroscopy

P. I. Rockett^*, A. R. Peaker

^*Corresponding author for this work

EEE - Academic & Research

UMIST

Research output: Contribution to journal › Article › peer-review

Abstract

With the aid of a high precision computer simulation we demonstrate that the frequently observed variation in DLTS peak height with emission rate window is not necessarily caused by nonexponential capacitance transients as is often supposed, but rather by the change in shape of the Debye tail with temperature. This variation in peak height is shown to be a function of temperature, reverse bias and trap depth.

Original language	English
Pages (from-to)	838-839
Number of pages	2
Journal	Electronics Letters
Volume	17
Issue number	22
DOIs	https://doi.org/10.1049/el:19810583
Publication status	Published - 29 Oct 1981

Keywords

Deeplevel transient spectroscopy
Junction capacitance
Semiconductor devices and materials

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10.1049/el:19810583

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@article{f0bda89a99e74f8684e34b998e7f43c8,

title = "Temperature dependence of peak heights in deep-level transient spectroscopy",

abstract = "With the aid of a high precision computer simulation we demonstrate that the frequently observed variation in DLTS peak height with emission rate window is not necessarily caused by nonexponential capacitance transients as is often supposed, but rather by the change in shape of the Debye tail with temperature. This variation in peak height is shown to be a function of temperature, reverse bias and trap depth.",

keywords = "Deeplevel transient spectroscopy, Junction capacitance, Semiconductor devices and materials",

author = "Rockett, {P. I.} and Peaker, {A. R.}",

year = "1981",

month = oct,

day = "29",

doi = "10.1049/el:19810583",

language = "English",

volume = "17",

pages = "838--839",

journal = " Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology ",

number = "22",

}

TY - JOUR

T1 - Temperature dependence of peak heights in deep-level transient spectroscopy

AU - Rockett, P. I.

AU - Peaker, A. R.

PY - 1981/10/29

Y1 - 1981/10/29

N2 - With the aid of a high precision computer simulation we demonstrate that the frequently observed variation in DLTS peak height with emission rate window is not necessarily caused by nonexponential capacitance transients as is often supposed, but rather by the change in shape of the Debye tail with temperature. This variation in peak height is shown to be a function of temperature, reverse bias and trap depth.

AB - With the aid of a high precision computer simulation we demonstrate that the frequently observed variation in DLTS peak height with emission rate window is not necessarily caused by nonexponential capacitance transients as is often supposed, but rather by the change in shape of the Debye tail with temperature. This variation in peak height is shown to be a function of temperature, reverse bias and trap depth.

KW - Deeplevel transient spectroscopy

KW - Junction capacitance

KW - Semiconductor devices and materials

UR - http://www.scopus.com/inward/record.url?scp=0019625420&partnerID=8YFLogxK

U2 - 10.1049/el:19810583

DO - 10.1049/el:19810583

M3 - Article

AN - SCOPUS:0019625420

SN - 0013-5194

VL - 17

SP - 838

EP - 839

JO - Electronics Letters

JF - Electronics Letters

IS - 22

ER -

Temperature dependence of peak heights in deep-level transient spectroscopy

Abstract

Keywords

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