TY - JOUR
T1 - Temperature dependent lifetime of Dy 3+
T2 - 1.3 μm emission in Ge-As-S glass containing very small amount of Ga and CsBr
AU - Choi, Yong Gyu
AU - Curry, Richard J.
AU - Hewak, Daniel W.
PY - 2012/11/1
Y1 - 2012/11/1
N2 - The lifetime of 1.3 μm emission from Dy 3+-doped Ge-As-S glass containing very small amount of Ga and CsBr reveals interesting temperature dependence; with the addition of Ga/CsBr up to ∼0.2 mol% the lifetime decreases with increasing temperature. When the concentration of Ga/CsBr reaches ∼0.3 mol%, however, the lifetime remains relatively constant regardless of temperature change. For further addition up to ∼0.5 mol%, the lifetime increases as temperature rises. This uncommon behavior is explained through our understanding of the different temperature dependences of multiphonon relaxation and spontaneous emission rates associated with the thermally coupled Dy 3+: ( 6H 9/2, 6F 11/2) manifolds in our modified chalcogenide glass.
AB - The lifetime of 1.3 μm emission from Dy 3+-doped Ge-As-S glass containing very small amount of Ga and CsBr reveals interesting temperature dependence; with the addition of Ga/CsBr up to ∼0.2 mol% the lifetime decreases with increasing temperature. When the concentration of Ga/CsBr reaches ∼0.3 mol%, however, the lifetime remains relatively constant regardless of temperature change. For further addition up to ∼0.5 mol%, the lifetime increases as temperature rises. This uncommon behavior is explained through our understanding of the different temperature dependences of multiphonon relaxation and spontaneous emission rates associated with the thermally coupled Dy 3+: ( 6H 9/2, 6F 11/2) manifolds in our modified chalcogenide glass.
UR - http://www.scopus.com/inward/record.url?scp=84867871527&partnerID=8YFLogxK
U2 - 10.1016/j.cplett.2012.09.018
DO - 10.1016/j.cplett.2012.09.018
M3 - Article
AN - SCOPUS:84867871527
SN - 0009-2614
VL - 551
SP - 101
EP - 104
JO - Chemical Physics Letters
JF - Chemical Physics Letters
ER -