Abstract
In this paper we describe the results of temperature dependent photoluminescence intensity and decay time measurements on a series of InAs/AlGaAs quantum dot structures where the depth of the confinement potential is varied from sample to sample. By comparison with a simple theoretical model the temperature dependent behaviour is ascibed to a combination of thermally induced occupation of excitonic dark states and thermionic emission of the confined holes.
| Original language | English |
|---|---|
| Pages (from-to) | 107-110 |
| Number of pages | 3 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 224 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Mar 2001 |
Keywords
- Hole (confined; temp. dependent optical properties of InAs/AlGaAs quantum dots); Exciton (dark; temp. dependent optical properties of InAs/AlGaAs quantum dots); Luminescence; Quantum dot devices; Thermionic emission (temp. dependent optical properties of InAs/AlGaAs quantum dots)