Temperature Effect on DC and Equivalent Circuit Parameters of 0.15-μm Gate Length GaN/SiC HEMT for Microwave Applications

Mohammad Abdul Alim, Ali A. Rezazadeh, Christophe Gaquiere

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Thermal characterizations and modeling have been carried out on a 0.15 μm × (4 × 50) μm gate GaN-/SiC-based high-electron-mobility transistor varying the temperature from -40 °C to 150 °C and the frequency up to 50 GHz using on-wafer measurements. The thermal behavior of the dc parameters along with thermal resistance estimation and the equivalent circuit parameters along with cutoff and maximum frequencies were analyzed and reported using a single device. The temperature coefficients of these parameters were presented and deduced the influence of thermal effects on device parameters. These results are important for the circuit designer for future advancement and design optimizations of GaN-based monolithic microwave ICs.

    Original languageEnglish
    Article number7567596
    Pages (from-to)3483-3491
    Number of pages9
    JournalIEEE Transactions on Microwave Theory and Techniques
    Volume64
    Issue number11
    Early online date14 Sept 2016
    DOIs
    Publication statusPublished - 1 Nov 2016

    Keywords

    • AlGaN/GaN/SiC high-electron-mobility transistor (HEMT)
    • dc and small signal circuit parameters
    • on-wafer measurements
    • thermal effect

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