Temperature Effect on DC and Equivalent Circuit Parameters of 0.15-μm Gate Length GaN/SiC HEMT for Microwave Applications

Mohammad Abdul Alim; Ali A. Rezazadeh; Christophe Gaquiere

doi:10.1109/TMTT.2016.2604815

Temperature Effect on DC and Equivalent Circuit Parameters of 0.15-μm Gate Length GaN/SiC HEMT for Microwave Applications

Mohammad Abdul Alim, Ali A. Rezazadeh, Christophe Gaquiere

Research output: Contribution to journal › Article › peer-review

Abstract

Thermal characterizations and modeling have been carried out on a 0.15 μm × (4 × 50) μm gate GaN-/SiC-based high-electron-mobility transistor varying the temperature from -40 °C to 150 °C and the frequency up to 50 GHz using on-wafer measurements. The thermal behavior of the dc parameters along with thermal resistance estimation and the equivalent circuit parameters along with cutoff and maximum frequencies were analyzed and reported using a single device. The temperature coefficients of these parameters were presented and deduced the influence of thermal effects on device parameters. These results are important for the circuit designer for future advancement and design optimizations of GaN-based monolithic microwave ICs.

Original language	English
Article number	7567596
Pages (from-to)	3483-3491
Number of pages	9
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	64
Issue number	11
Early online date	14 Sept 2016
DOIs	https://doi.org/10.1109/TMTT.2016.2604815
Publication status	Published - 1 Nov 2016

Keywords

AlGaN/GaN/SiC high-electron-mobility transistor (HEMT)
dc and small signal circuit parameters
on-wafer measurements
thermal effect

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10.1109/TMTT.2016.2604815

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abstract = "Thermal characterizations and modeling have been carried out on a 0.15 μm × (4 × 50) μm gate GaN-/SiC-based high-electron-mobility transistor varying the temperature from -40 °C to 150 °C and the frequency up to 50 GHz using on-wafer measurements. The thermal behavior of the dc parameters along with thermal resistance estimation and the equivalent circuit parameters along with cutoff and maximum frequencies were analyzed and reported using a single device. The temperature coefficients of these parameters were presented and deduced the influence of thermal effects on device parameters. These results are important for the circuit designer for future advancement and design optimizations of GaN-based monolithic microwave ICs.",

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AU - Alim, Mohammad Abdul

AU - Rezazadeh, Ali A.

AU - Gaquiere, Christophe

PY - 2016/11/1

Y1 - 2016/11/1

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AB - Thermal characterizations and modeling have been carried out on a 0.15 μm × (4 × 50) μm gate GaN-/SiC-based high-electron-mobility transistor varying the temperature from -40 °C to 150 °C and the frequency up to 50 GHz using on-wafer measurements. The thermal behavior of the dc parameters along with thermal resistance estimation and the equivalent circuit parameters along with cutoff and maximum frequencies were analyzed and reported using a single device. The temperature coefficients of these parameters were presented and deduced the influence of thermal effects on device parameters. These results are important for the circuit designer for future advancement and design optimizations of GaN-based monolithic microwave ICs.

KW - AlGaN/GaN/SiC high-electron-mobility transistor (HEMT)

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Temperature Effect on DC and Equivalent Circuit Parameters of 0.15-μm Gate Length GaN/SiC HEMT for Microwave Applications

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