Temperature efficiency dependence of intermediate band GaAs/InAs Quantum Dots Photovoltaic Devices

Edson Garduno Nolasco, Edson Garduno-Nolasco (Editor), Mohammed Missous (Editor), Daniel Donoval (Editor), Jaroslav Kovak (Editor), Miroslav Mikolasev (Editor)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, three different inter-dot doped InAs/GaAs quantum dots (QDs) structures grown on GaAs substrates using Molecular Beam Epitaxy are studied. The highly doped (16x1010 /cm2¬) samples showed the highest efficiency of ~10 % under 20 suns, which is an excellent value for these simple structures and with a fill factor (FF) up to 73%. Temperature dependence measurements, within the range of 26 to 120 °C, under 20 suns were performed. The efficiency is found to be decreased by a coefficient of -0.016% per degree Celsius.
Original languageEnglish
Title of host publicationHETECH 2013 22nd European Workshop on Heterostructure Technology
EditorsEdson Garduno-Nolasco, Mohammed Missous, Daniel Donoval, Jaroslav Kovak, Miroslav Mikolasev
PublisherHETECH
Publication statusPublished - 11 Sept 2013
EventHETECH 2013 - University of Glasgow in Scotland
Duration: 9 Sept 201311 Sept 2013

Conference

ConferenceHETECH 2013
CityUniversity of Glasgow in Scotland
Period9/09/1311/09/13

Keywords

  • Temperature dependence, efficiency, fill-factor, open-circuit voltage, short-circuit current density, solar cells

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