Abstract
Laser-Induced Breakdown Spectroscopy of silicon was performed using a nanosecond pulsed frequency doubled Nd:YAG (532 nm) laser. The temporal evolution of the laser ablation plumes in air at atmospheric pressure and at an ambient pressure of ∼ 10- 5 mbar is presented. Electron densities were determined from the Stark broadening of the Si (I) 288.16 nm emission line. Electron densities in the range of 6.91 × 1017 to 1.29 × 1019 cm- 3 at atmospheric pressure and 1.68 × 1017 to 3.02 × 1019 cm- 3 under vacuum were observed. Electron excitation temperatures were obtained from the line to continuum ratios and yielded temperatures in the range 7600-18,200 K at atmospheric pressure, and 8020-18,200 K under vacuum. The plasma morphology is also characterized with respect to time in both pressure regimes. © 2008 Elsevier B.V. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 1066-1071 |
| Number of pages | 5 |
| Journal | Spectrochimica Acta - Part B : Atomic Spectroscopy |
| Volume | 63 |
| Issue number | 10 |
| Publication status | Published - Oct 2008 |
Keywords
- Laser ablation
- LIBS
- Plasma diagnostics
- Silicon
- Vacuum