Terahertz generation and detection using low temperature grown InGaAs-InAlAs photoconductive antennas at 1.55 μ pulse excitation

Ioannis Kostakis; Daryoosh Saeedkia; Mohamed Missous

doi:10.1109/TTHZ.2012.2219047

Terahertz generation and detection using low temperature grown InGaAs-InAlAs photoconductive antennas at 1.55 μ pulse excitation

Ioannis Kostakis, Daryoosh Saeedkia, Mohamed Missous

Research output: Contribution to journal › Article › peer-review

Abstract

Photoconductive antennas fabricated on novel low temperature (LT) beryllium (Be) doped InGaAs-InAlAs multi-quantum-well structures have been evaluated as THz emitters and detectors in a time-domain spectroscopy (TDS) system. We present system responses with THz pulses having spectral range up to 3 THz and power to noise ratio of 60 dB, making them competitive with LT-GaAs excited at 800 nm and among the highest reported to date for this material system. © 2011-2012 IEEE.

Original language	English
Article number	6324408
Pages (from-to)	617-622
Number of pages	5
Journal	IEEE Transactions on Terahertz Science and Technology
Volume	2
Issue number	6
DOIs	https://doi.org/10.1109/TTHZ.2012.2219047
Publication status	Published - 2012

Keywords

Low temperature (LT) InGaAs-InAlAs
pulse excitation
THz emitters and detectors
time-domain spectroscopy

Access to Document

10.1109/TTHZ.2012.2219047

Cite this

@article{f6e11cb978af41acbab6e099966a3405,

title = "Terahertz generation and detection using low temperature grown InGaAs-InAlAs photoconductive antennas at 1.55 μ pulse excitation",

abstract = "Photoconductive antennas fabricated on novel low temperature (LT) beryllium (Be) doped InGaAs-InAlAs multi-quantum-well structures have been evaluated as THz emitters and detectors in a time-domain spectroscopy (TDS) system. We present system responses with THz pulses having spectral range up to 3 THz and power to noise ratio of 60 dB, making them competitive with LT-GaAs excited at 800 nm and among the highest reported to date for this material system. {\textcopyright} 2011-2012 IEEE.",

keywords = "Low temperature (LT) InGaAs-InAlAs, pulse excitation, THz emitters and detectors, time-domain spectroscopy",

author = "Ioannis Kostakis and Daryoosh Saeedkia and Mohamed Missous",

year = "2012",

doi = "10.1109/TTHZ.2012.2219047",

language = "English",

volume = "2",

pages = "617--622",

journal = "IEEE Transactions on Terahertz Science and Technology",

issn = "2156-3446",

publisher = "IEEE",

number = "6",

}

TY - JOUR

T1 - Terahertz generation and detection using low temperature grown InGaAs-InAlAs photoconductive antennas at 1.55 μ pulse excitation

AU - Kostakis, Ioannis

AU - Saeedkia, Daryoosh

AU - Missous, Mohamed

PY - 2012

Y1 - 2012

N2 - Photoconductive antennas fabricated on novel low temperature (LT) beryllium (Be) doped InGaAs-InAlAs multi-quantum-well structures have been evaluated as THz emitters and detectors in a time-domain spectroscopy (TDS) system. We present system responses with THz pulses having spectral range up to 3 THz and power to noise ratio of 60 dB, making them competitive with LT-GaAs excited at 800 nm and among the highest reported to date for this material system. © 2011-2012 IEEE.

AB - Photoconductive antennas fabricated on novel low temperature (LT) beryllium (Be) doped InGaAs-InAlAs multi-quantum-well structures have been evaluated as THz emitters and detectors in a time-domain spectroscopy (TDS) system. We present system responses with THz pulses having spectral range up to 3 THz and power to noise ratio of 60 dB, making them competitive with LT-GaAs excited at 800 nm and among the highest reported to date for this material system. © 2011-2012 IEEE.

KW - Low temperature (LT) InGaAs-InAlAs

KW - pulse excitation

KW - THz emitters and detectors

KW - time-domain spectroscopy

U2 - 10.1109/TTHZ.2012.2219047

DO - 10.1109/TTHZ.2012.2219047

M3 - Article

SN - 2156-3446

VL - 2

SP - 617

EP - 622

JO - IEEE Transactions on Terahertz Science and Technology

JF - IEEE Transactions on Terahertz Science and Technology

IS - 6

M1 - 6324408

ER -

Terahertz generation and detection using low temperature grown InGaAs-InAlAs photoconductive antennas at 1.55 μ pulse excitation

Abstract

Keywords

Access to Document

Fingerprint

Cite this