Terahertz sensing based on impurity transitions in delta-doped GaAs/AlAs multiple quantum wells

Dalius Seliuta; Bronislovas Čechavičius; Julius Kavaliauskas; Saulius Balakauskas; Gintaras Valušis; Ben Sherliker; Matthew Halsall; Mohamed Lachab; Suraj P. Khanna; Paul Harrison; H. Edmund Linfield

doi:10.1063/1.3295358

Terahertz sensing based on impurity transitions in delta-doped GaAs/AlAs multiple quantum wells

Dalius Seliuta
, Bronislovas Čechavičius
, Julius Kavaliauskas
, Saulius Balakauskas
, Gintaras Valušis
, Ben Sherliker
, Matthew Halsall
, Mohamed Lachab
, Suraj P. Khanna
, Paul Harrison
, H. Edmund Linfield

Research output: Contribution to journal › Article › peer-review

Abstract

Impurity bound-to-unbound transitions are used to demonstrate normal incidence terahertz detection in both n- and p-type multiple quantum wells. Photocurrents are detected between 0.6-4.2 THz, and between 3.7-7.3 THz, in silicon- and beryllium-doped GaAs/AlAs structures, respectively, at temperatures below 40 K. The temporal resolution of the photocurrent response is estimated to be ≈ 4 ns. © 2009 American Institute of Physics.

Original language	English
Pages (from-to)	183-184
Number of pages	1
Journal	AIP Conference Proceedings
Volume	1199
DOIs	https://doi.org/10.1063/1.3295358
Publication status	Published - 2009

Keywords

GaAs/AlAs quantum wells
Impurity transitions
Terahertz sensing

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10.1063/1.3295358

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title = "Terahertz sensing based on impurity transitions in delta-doped GaAs/AlAs multiple quantum wells",

abstract = "Impurity bound-to-unbound transitions are used to demonstrate normal incidence terahertz detection in both n- and p-type multiple quantum wells. Photocurrents are detected between 0.6-4.2 THz, and between 3.7-7.3 THz, in silicon- and beryllium-doped GaAs/AlAs structures, respectively, at temperatures below 40 K. The temporal resolution of the photocurrent response is estimated to be ≈ 4 ns. {\textcopyright} 2009 American Institute of Physics.",

keywords = "GaAs/AlAs quantum wells, Impurity transitions, Terahertz sensing",

author = "Dalius Seliuta and Bronislovas {\v C}echavi{\v c}ius and Julius Kavaliauskas and Saulius Balakauskas and Gintaras Valu{\v s}is and Ben Sherliker and Matthew Halsall and Mohamed Lachab and Khanna, \{Suraj P.\} and Paul Harrison and \{Edmund Linfield\}, H.",

year = "2009",

doi = "10.1063/1.3295358",

language = "English",

volume = "1199",

pages = "183--184",

journal = "AIP Conference Proceedings",

issn = "1551-7616",

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TY - JOUR

T1 - Terahertz sensing based on impurity transitions in delta-doped GaAs/AlAs multiple quantum wells

AU - Seliuta, Dalius

AU - Čechavičius, Bronislovas

AU - Kavaliauskas, Julius

AU - Balakauskas, Saulius

AU - Valušis, Gintaras

AU - Sherliker, Ben

AU - Halsall, Matthew

AU - Lachab, Mohamed

AU - Khanna, Suraj P.

AU - Harrison, Paul

AU - Edmund Linfield, H.

PY - 2009

Y1 - 2009

N2 - Impurity bound-to-unbound transitions are used to demonstrate normal incidence terahertz detection in both n- and p-type multiple quantum wells. Photocurrents are detected between 0.6-4.2 THz, and between 3.7-7.3 THz, in silicon- and beryllium-doped GaAs/AlAs structures, respectively, at temperatures below 40 K. The temporal resolution of the photocurrent response is estimated to be ≈ 4 ns. © 2009 American Institute of Physics.

AB - Impurity bound-to-unbound transitions are used to demonstrate normal incidence terahertz detection in both n- and p-type multiple quantum wells. Photocurrents are detected between 0.6-4.2 THz, and between 3.7-7.3 THz, in silicon- and beryllium-doped GaAs/AlAs structures, respectively, at temperatures below 40 K. The temporal resolution of the photocurrent response is estimated to be ≈ 4 ns. © 2009 American Institute of Physics.

KW - GaAs/AlAs quantum wells

KW - Impurity transitions

KW - Terahertz sensing

U2 - 10.1063/1.3295358

DO - 10.1063/1.3295358

M3 - Article

SN - 1551-7616

VL - 1199

SP - 183

EP - 184

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

ER -

Terahertz sensing based on impurity transitions in delta-doped GaAs/AlAs multiple quantum wells

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Keywords

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