Terahertz Spectroscopy of Modulation Doped Core-Shell GaAs/AlGaAs Nanowires

Jessica L. Boland; Sonia Conesa-Boj; G. Tutuncouglu; F. Matteini; D. Ruffer; A. Casadei; F. Gaveen; F. Amaduzzi; P. Parkinson; C. Davies; H. J. Joyce; L. M. Herz; A. Fontcuberta i Morral; Michael B. Johnston

Terahertz Spectroscopy of Modulation Doped Core-Shell GaAs/AlGaAs Nanowires

Jessica L. Boland, Sonia Conesa-Boj, G. Tutuncouglu, F. Matteini, D. Ruffer, A. Casadei, F. Gaveen, F. Amaduzzi, P. Parkinson, C. Davies, H. J. Joyce, L. M. Herz, A. Fontcuberta i Morral, Michael B. Johnston

Oxford University

Research output: Contribution to journal › Conference article › peer-review

Abstract

In order to realize many devices based on semiconductor nanowires, reliable doping is essential. For such devices, it is important that the electron mobility is not compromised by doping incorporation. Here, we show that core-shell GaAs/AlGaAs nanowires can be modulation n-type doped with negligible loss of electron mobility. Optical pump terahertz probe spectroscopy is used as a novel, reliable, noncontact method of determining the doping density, carrier mobility and charge carrier lifetimes for these n-type nanowires and an undoped reference. A carrier concentration of 1.10 ± 0.06 × 1016 cm-3 was extracted proving the effectiveness of modulation doping in GaAs nanowires. The room-temperature electron mobility was found to be high at 2200 ± 300 cm2V-1s-1 with no degradation in comparison to undoped reference nanowires.

Original language	English
Journal	International Conference on Infrared, Millimeter, and Terahertz Waves
Publication status	Published - 2015

Cite this

@article{2f748a9b93094089b959516562814289,

title = "Terahertz Spectroscopy of Modulation Doped Core-Shell GaAs/AlGaAs Nanowires",

abstract = "In order to realize many devices based on semiconductor nanowires, reliable doping is essential. For such devices, it is important that the electron mobility is not compromised by doping incorporation. Here, we show that core-shell GaAs/AlGaAs nanowires can be modulation n-type doped with negligible loss of electron mobility. Optical pump terahertz probe spectroscopy is used as a novel, reliable, noncontact method of determining the doping density, carrier mobility and charge carrier lifetimes for these n-type nanowires and an undoped reference. A carrier concentration of 1.10 ± 0.06 × 1016 cm-3 was extracted proving the effectiveness of modulation doping in GaAs nanowires. The room-temperature electron mobility was found to be high at 2200 ± 300 cm2V-1s-1 with no degradation in comparison to undoped reference nanowires.",

author = "Boland, {Jessica L.} and Sonia Conesa-Boj and G. Tutuncouglu and F. Matteini and D. Ruffer and A. Casadei and F. Gaveen and F. Amaduzzi and P. Parkinson and C. Davies and Joyce, {H. J.} and Herz, {L. M.} and {Fontcuberta i Morral}, A. and Johnston, {Michael B.}",

year = "2015",

language = "English",

journal = "International Conference on Infrared, Millimeter, and Terahertz Waves",

issn = "2162-2027",

publisher = "IEEE",

}

TY - JOUR

T1 - Terahertz Spectroscopy of Modulation Doped Core-Shell GaAs/AlGaAs Nanowires

AU - Boland, Jessica L.

AU - Conesa-Boj, Sonia

AU - Tutuncouglu, G.

AU - Matteini, F.

AU - Ruffer, D.

AU - Casadei, A.

AU - Gaveen, F.

AU - Amaduzzi, F.

AU - Parkinson, P.

AU - Davies, C.

AU - Joyce, H. J.

AU - Herz, L. M.

AU - Fontcuberta i Morral, A.

AU - Johnston, Michael B.

PY - 2015

Y1 - 2015

N2 - In order to realize many devices based on semiconductor nanowires, reliable doping is essential. For such devices, it is important that the electron mobility is not compromised by doping incorporation. Here, we show that core-shell GaAs/AlGaAs nanowires can be modulation n-type doped with negligible loss of electron mobility. Optical pump terahertz probe spectroscopy is used as a novel, reliable, noncontact method of determining the doping density, carrier mobility and charge carrier lifetimes for these n-type nanowires and an undoped reference. A carrier concentration of 1.10 ± 0.06 × 1016 cm-3 was extracted proving the effectiveness of modulation doping in GaAs nanowires. The room-temperature electron mobility was found to be high at 2200 ± 300 cm2V-1s-1 with no degradation in comparison to undoped reference nanowires.

AB - In order to realize many devices based on semiconductor nanowires, reliable doping is essential. For such devices, it is important that the electron mobility is not compromised by doping incorporation. Here, we show that core-shell GaAs/AlGaAs nanowires can be modulation n-type doped with negligible loss of electron mobility. Optical pump terahertz probe spectroscopy is used as a novel, reliable, noncontact method of determining the doping density, carrier mobility and charge carrier lifetimes for these n-type nanowires and an undoped reference. A carrier concentration of 1.10 ± 0.06 × 1016 cm-3 was extracted proving the effectiveness of modulation doping in GaAs nanowires. The room-temperature electron mobility was found to be high at 2200 ± 300 cm2V-1s-1 with no degradation in comparison to undoped reference nanowires.

M3 - Conference article

SN - 2162-2027

JO - International Conference on Infrared, Millimeter, and Terahertz Waves

JF - International Conference on Infrared, Millimeter, and Terahertz Waves

ER -

Terahertz Spectroscopy of Modulation Doped Core-Shell GaAs/AlGaAs Nanowires

Abstract

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