Terahertz spectroscopy of shift currents resulting from asymmetric (110)-oriented GaAs/AlGaAs quantum wells

Shekhar Priyadarshi; Markus Leidinger; Klaus Pierz; Ana M. Racu; Uwe Siegner; Mark Bieler; Philip Dawson

doi:10.1063/1.3249611

Terahertz spectroscopy of shift currents resulting from asymmetric (110)-oriented GaAs/AlGaAs quantum wells

Shekhar Priyadarshi, Markus Leidinger, Klaus Pierz, Ana M. Racu, Uwe Siegner, Mark Bieler, Philip Dawson

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Abstract

We report the observation and the study of an additional shift current tensor element in (110)-oriented GaAs quantum wells, which arises from an out-of-plane asymmetry of the quantum well structure. The current resulting from this tensor element is optically induced with 150 fs laser pulses and detected by measuring the simultaneously emitted terahertz radiation. This terahertz spectroscopy of shift currents is a powerful technique for symmetry investigations, which shows, for example, that our nominally symmetric (110)-oriented GaAs/AlGaAs quantum wells grown by molecular beam epitaxy are in reality asymmetric structures with different right and left interfaces. © 2009 American Institute of Physics.

Original language	English
Article number	151110
Journal	Applied Physics Letters
Volume	95
Issue number	15
DOIs	https://doi.org/10.1063/1.3249611
Publication status	Published - 2009

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title = "Terahertz spectroscopy of shift currents resulting from asymmetric (110)-oriented GaAs/AlGaAs quantum wells",

abstract = "We report the observation and the study of an additional shift current tensor element in (110)-oriented GaAs quantum wells, which arises from an out-of-plane asymmetry of the quantum well structure. The current resulting from this tensor element is optically induced with 150 fs laser pulses and detected by measuring the simultaneously emitted terahertz radiation. This terahertz spectroscopy of shift currents is a powerful technique for symmetry investigations, which shows, for example, that our nominally symmetric (110)-oriented GaAs/AlGaAs quantum wells grown by molecular beam epitaxy are in reality asymmetric structures with different right and left interfaces. {\textcopyright} 2009 American Institute of Physics.",

author = "Shekhar Priyadarshi and Markus Leidinger and Klaus Pierz and Racu, {Ana M.} and Uwe Siegner and Mark Bieler and Philip Dawson",

year = "2009",

doi = "10.1063/1.3249611",

language = "English",

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journal = "Applied Physics Letters",

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T1 - Terahertz spectroscopy of shift currents resulting from asymmetric (110)-oriented GaAs/AlGaAs quantum wells

AU - Priyadarshi, Shekhar

AU - Leidinger, Markus

AU - Pierz, Klaus

AU - Racu, Ana M.

AU - Siegner, Uwe

AU - Bieler, Mark

AU - Dawson, Philip

PY - 2009

Y1 - 2009

N2 - We report the observation and the study of an additional shift current tensor element in (110)-oriented GaAs quantum wells, which arises from an out-of-plane asymmetry of the quantum well structure. The current resulting from this tensor element is optically induced with 150 fs laser pulses and detected by measuring the simultaneously emitted terahertz radiation. This terahertz spectroscopy of shift currents is a powerful technique for symmetry investigations, which shows, for example, that our nominally symmetric (110)-oriented GaAs/AlGaAs quantum wells grown by molecular beam epitaxy are in reality asymmetric structures with different right and left interfaces. © 2009 American Institute of Physics.

AB - We report the observation and the study of an additional shift current tensor element in (110)-oriented GaAs quantum wells, which arises from an out-of-plane asymmetry of the quantum well structure. The current resulting from this tensor element is optically induced with 150 fs laser pulses and detected by measuring the simultaneously emitted terahertz radiation. This terahertz spectroscopy of shift currents is a powerful technique for symmetry investigations, which shows, for example, that our nominally symmetric (110)-oriented GaAs/AlGaAs quantum wells grown by molecular beam epitaxy are in reality asymmetric structures with different right and left interfaces. © 2009 American Institute of Physics.

U2 - 10.1063/1.3249611

DO - 10.1063/1.3249611

M3 - Article

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 151110

ER -

Terahertz spectroscopy of shift currents resulting from asymmetric (110)-oriented GaAs/AlGaAs quantum wells

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