The characterization of TiN thin films using optical reflectivity measurements

Thin films of TiN have been deposited by reactive magnetron sputter deposition in varying partial pressures of nitrogen. Reflectivity measurements have been carried out between 1.5 and 3.5 eV and a correlation made between the film properties and optical data. Resistivity measurements carried out at room temperature are shown to exhibit the same trends as those obtained from reflectivity experiments. X-ray absorption fine structure measurements, in both electron-yield and fluorescence-yield modes, have shown the films to be identical and stoichiometric to within ±5 at.%. The use of reflectivity spectra to form the basis of a characterization tool for physical vapour deposited thin films is discussed.