The determination of valence band discontinuities and interface charge densities in Si/Si1-yGey/Si heterojunctions

J. C. Brighten; I. D. Hawkins; A. R. Peaker; R. A. Kubiak; E. H.C. Parker; T. E. Whall

doi:10.1088/0268-1242/8/7/048

The determination of valence band discontinuities and interface charge densities in Si/Si_1-yGe_y/Si heterojunctions

J. C. Brighten^*, I. D. Hawkins, A. R. Peaker, R. A. Kubiak, E. H.C. Parker, T. E. Whall

^*Corresponding author for this work

The University of Warwick

Research output: Contribution to journal › Article › peer-review

Abstract

The valence band offsets in Si/Si_1-yGe_y/Si strained-layer heterostructures with 0<y<0.14 have been determined by CV measurements and from the analysis of Kroemer. Good agreement is obtained with theoretical predictions of values in the range 0 to 0.1 eV. Extracted interface charge densities are consistent with values deduced from parallel transport measurements in 2DHG structures.

Original language	English
Article number	048
Pages (from-to)	1487-1489
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	8
Issue number	7
DOIs	https://doi.org/10.1088/0268-1242/8/7/048
Publication status	Published - 1993

Access to Document

10.1088/0268-1242/8/7/048

Cite this

@article{23fdab9119de48a6847dadfc3ff34157,

title = "The determination of valence band discontinuities and interface charge densities in Si/Si1-yGey/Si heterojunctions",

abstract = "The valence band offsets in Si/Si1-yGey/Si strained-layer heterostructures with 0",

author = "Brighten, \{J. C.\} and Hawkins, \{I. D.\} and Peaker, \{A. R.\} and Kubiak, \{R. A.\} and Parker, \{E. H.C.\} and Whall, \{T. E.\}",

year = "1993",

doi = "10.1088/0268-1242/8/7/048",

language = "English",

volume = "8",

pages = "1487--1489",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd",

number = "7",

}

TY - JOUR

T1 - The determination of valence band discontinuities and interface charge densities in Si/Si1-yGey/Si heterojunctions

AU - Brighten, J. C.

AU - Hawkins, I. D.

AU - Peaker, A. R.

AU - Kubiak, R. A.

AU - Parker, E. H.C.

AU - Whall, T. E.

PY - 1993

Y1 - 1993

N2 - The valence band offsets in Si/Si1-yGey/Si strained-layer heterostructures with 0

AB - The valence band offsets in Si/Si1-yGey/Si strained-layer heterostructures with 0

UR - http://www.scopus.com/inward/record.url?scp=0027627226&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/8/7/048

DO - 10.1088/0268-1242/8/7/048

M3 - Article

AN - SCOPUS:0027627226

SN - 0268-1242

VL - 8

SP - 1487

EP - 1489

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 7

M1 - 048

ER -

The determination of valence band discontinuities and interface charge densities in Si/Si_1-yGe_y/Si heterojunctions

Abstract

Access to Document

Other files and links

Fingerprint

Cite this