The di-interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms

V. E. Gusakov, S.B. Lastovskii, L. I. Murin, E.A. Tolkacheva, L. I. Khirunenko, M. G. Sosnin, A.V. Duvanskii, Vladimir Markevich, Matthew Halsall, Anthony Peaker, I Kolevatov, H.M. Ayedh, E. V. Monakhov, B. G. Svensson

Research output: Contribution to journal › Article › peer-review