The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures

D. M. Graham; P. Dawson; Y. Zhang; P. M F J Costa; M. J. Kappers; C. J. Humphreys; E. J. Thrush

doi:10.1002/pssc.200565246

The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures

D. M. Graham, P. Dawson, Y. Zhang, P. M F J Costa, M. J. Kappers, C. J. Humphreys, E. J. Thrush

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We have studied the effect of depositing a Mg-doped GaN cap layer on near-ultraviolet emitting In0.05Ga0.95N/Al 0.05Ga0.95N multiple quantum well structures, using photoluminescence spectroscopy and transmission electron microscopy. The room temperature (T = 300 K) photoluminescence spectra revealed a reduction in the integrated photoluminescence intensity of the capped structure, which is shown by time decay measurements to be due to greater competition from non-radiative recombination processes. The structural analysis of the samples using electron microscopy has not shown any evidence of Mg-induced defects. We suggest that the non-radiative recombination path is related to the diffusion of Mg atoms into the quantum well region and the formation of Mg-nitrogen vacancy complexes. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

Original language	English
Title of host publication	Physica Status Solidi (C) Current Topics in Solid State Physics\|Phys. Status Solidi C Curr. Top. Solid State Phys.
Place of Publication	Physica Status Solidi (c)
Publisher	John Wiley & Sons Ltd
Pages	2005-2008
Number of pages	3
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565246
Publication status	Published - 2006
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen Duration: 1 Jul 2006 → …

Conference

Conference	6th International Conference on Nitride Semiconductors, ICNS-6
City	Bremen
Period	1/07/06 → …

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Graham, D. M., Dawson, P., Zhang, Y., Costa, P. M. F. J., Kappers, M. J., Humphreys, C. J., & Thrush, E. J. (2006). The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures. In Physica Status Solidi (C) Current Topics in Solid State Physics|Phys. Status Solidi C Curr. Top. Solid State Phys. (Vol. 3, pp. 2005-2008). John Wiley & Sons Ltd. https://doi.org/10.1002/pssc.200565246

@inproceedings{2a3e436c9e464a398a12e33537d1d839,

title = "The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures",

abstract = "We have studied the effect of depositing a Mg-doped GaN cap layer on near-ultraviolet emitting In0.05Ga0.95N/Al 0.05Ga0.95N multiple quantum well structures, using photoluminescence spectroscopy and transmission electron microscopy. The room temperature (T = 300 K) photoluminescence spectra revealed a reduction in the integrated photoluminescence intensity of the capped structure, which is shown by time decay measurements to be due to greater competition from non-radiative recombination processes. The structural analysis of the samples using electron microscopy has not shown any evidence of Mg-induced defects. We suggest that the non-radiative recombination path is related to the diffusion of Mg atoms into the quantum well region and the formation of Mg-nitrogen vacancy complexes. {\textcopyright} 2006 WILEY-VCH Verlag GmbH & Co. KGaA.",

author = "Graham, {D. M.} and P. Dawson and Y. Zhang and Costa, {P. M F J} and Kappers, {M. J.} and Humphreys, {C. J.} and Thrush, {E. J.}",

year = "2006",

doi = "10.1002/pssc.200565246",

language = "English",

volume = "3",

pages = "2005--2008",

booktitle = "Physica Status Solidi (C) Current Topics in Solid State Physics|Phys. Status Solidi C Curr. Top. Solid State Phys.",

publisher = "John Wiley & Sons Ltd",

address = "United Kingdom",

note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 01-07-2006",

}

Graham, DM, Dawson, P, Zhang, Y, Costa, PMFJ, Kappers, MJ, Humphreys, CJ & Thrush, EJ 2006, The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures. in Physica Status Solidi (C) Current Topics in Solid State Physics|Phys. Status Solidi C Curr. Top. Solid State Phys.. vol. 3, John Wiley & Sons Ltd, Physica Status Solidi (c), pp. 2005-2008, 6th International Conference on Nitride Semiconductors, ICNS-6, Bremen, 1/07/06. https://doi.org/10.1002/pssc.200565246

The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures. / Graham, D. M.; Dawson, P.; Zhang, Y. et al.
Physica Status Solidi (C) Current Topics in Solid State Physics|Phys. Status Solidi C Curr. Top. Solid State Phys.. Vol. 3 Physica Status Solidi (c): John Wiley & Sons Ltd, 2006. p. 2005-2008.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures

AU - Graham, D. M.

AU - Dawson, P.

AU - Zhang, Y.

AU - Costa, P. M F J

AU - Kappers, M. J.

AU - Humphreys, C. J.

AU - Thrush, E. J.

PY - 2006

Y1 - 2006

N2 - We have studied the effect of depositing a Mg-doped GaN cap layer on near-ultraviolet emitting In0.05Ga0.95N/Al 0.05Ga0.95N multiple quantum well structures, using photoluminescence spectroscopy and transmission electron microscopy. The room temperature (T = 300 K) photoluminescence spectra revealed a reduction in the integrated photoluminescence intensity of the capped structure, which is shown by time decay measurements to be due to greater competition from non-radiative recombination processes. The structural analysis of the samples using electron microscopy has not shown any evidence of Mg-induced defects. We suggest that the non-radiative recombination path is related to the diffusion of Mg atoms into the quantum well region and the formation of Mg-nitrogen vacancy complexes. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

AB - We have studied the effect of depositing a Mg-doped GaN cap layer on near-ultraviolet emitting In0.05Ga0.95N/Al 0.05Ga0.95N multiple quantum well structures, using photoluminescence spectroscopy and transmission electron microscopy. The room temperature (T = 300 K) photoluminescence spectra revealed a reduction in the integrated photoluminescence intensity of the capped structure, which is shown by time decay measurements to be due to greater competition from non-radiative recombination processes. The structural analysis of the samples using electron microscopy has not shown any evidence of Mg-induced defects. We suggest that the non-radiative recombination path is related to the diffusion of Mg atoms into the quantum well region and the formation of Mg-nitrogen vacancy complexes. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

U2 - 10.1002/pssc.200565246

DO - 10.1002/pssc.200565246

M3 - Conference contribution

VL - 3

SP - 2005

EP - 2008

BT - Physica Status Solidi (C) Current Topics in Solid State Physics|Phys. Status Solidi C Curr. Top. Solid State Phys.

PB - John Wiley & Sons Ltd

CY - Physica Status Solidi (c)

T2 - 6th International Conference on Nitride Semiconductors, ICNS-6

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ER -

Graham DM, Dawson P, Zhang Y, Costa PMFJ, Kappers MJ, Humphreys CJ et al. The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures. In Physica Status Solidi (C) Current Topics in Solid State Physics|Phys. Status Solidi C Curr. Top. Solid State Phys.. Vol. 3. Physica Status Solidi (c): John Wiley & Sons Ltd. 2006. p. 2005-2008 doi: 10.1002/pssc.200565246

The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures

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