The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides

D. F. Logan; P. E. Jessop; A. P. Knights; R. M. Gwilliam; M. P. Halsall

doi:10.1109/COMMAD.2008.4802114

The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides

D. F. Logan, P. E. Jessop, A. P. Knights, R. M. Gwilliam, M. P. Halsall

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The influence of the charge state of ion implantation induced defects in SOI waveguides on the absorption of sub bandgap wavelengths is described. It is found that waveguides pre-doped with boron absorb with significantly greater efficiency than those pre-doped with phosphorus. Following annealing at 300o°C this difference is approximately 8dBcm-1, while the intrinsic loss of the waveguides is limited to 2dBcm-1. These results have significant ramifications for a number of integrated optical devices fabricated in silicon. © 2008 IEEE.

Original language	English
Title of host publication	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Pages	152-155
Number of pages	3
DOIs	https://doi.org/10.1109/COMMAD.2008.4802114
Publication status	Published - 2008

Keywords

Absorption
Integrated optics
Ion implantation
Silicon
Waveguides

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10.1109/COMMAD.2008.4802114

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Logan, D. F., Jessop, P. E., Knights, A. P., Gwilliam, R. M., & Halsall, M. P. (2008). The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides. In Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD (pp. 152-155) https://doi.org/10.1109/COMMAD.2008.4802114

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title = "The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides",

abstract = "The influence of the charge state of ion implantation induced defects in SOI waveguides on the absorption of sub bandgap wavelengths is described. It is found that waveguides pre-doped with boron absorb with significantly greater efficiency than those pre-doped with phosphorus. Following annealing at 300o°C this difference is approximately 8dBcm-1, while the intrinsic loss of the waveguides is limited to 2dBcm-1. These results have significant ramifications for a number of integrated optical devices fabricated in silicon. {\textcopyright} 2008 IEEE.",

keywords = "Absorption, Integrated optics, Ion implantation, Silicon, Waveguides",

author = "Logan, {D. F.} and Jessop, {P. E.} and Knights, {A. P.} and Gwilliam, {R. M.} and Halsall, {M. P.}",

year = "2008",

doi = "10.1109/COMMAD.2008.4802114",

language = "English",

pages = "152--155",

booktitle = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

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The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides. / Logan, D. F.; Jessop, P. E.; Knights, A. P. et al.
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. 2008. p. 152-155.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides

AU - Logan, D. F.

AU - Jessop, P. E.

AU - Knights, A. P.

AU - Gwilliam, R. M.

AU - Halsall, M. P.

PY - 2008

Y1 - 2008

N2 - The influence of the charge state of ion implantation induced defects in SOI waveguides on the absorption of sub bandgap wavelengths is described. It is found that waveguides pre-doped with boron absorb with significantly greater efficiency than those pre-doped with phosphorus. Following annealing at 300o°C this difference is approximately 8dBcm-1, while the intrinsic loss of the waveguides is limited to 2dBcm-1. These results have significant ramifications for a number of integrated optical devices fabricated in silicon. © 2008 IEEE.

AB - The influence of the charge state of ion implantation induced defects in SOI waveguides on the absorption of sub bandgap wavelengths is described. It is found that waveguides pre-doped with boron absorb with significantly greater efficiency than those pre-doped with phosphorus. Following annealing at 300o°C this difference is approximately 8dBcm-1, while the intrinsic loss of the waveguides is limited to 2dBcm-1. These results have significant ramifications for a number of integrated optical devices fabricated in silicon. © 2008 IEEE.

KW - Absorption

KW - Integrated optics

KW - Ion implantation

KW - Silicon

KW - Waveguides

U2 - 10.1109/COMMAD.2008.4802114

DO - 10.1109/COMMAD.2008.4802114

M3 - Conference contribution

SP - 152

EP - 155

BT - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

ER -

The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides

Abstract

Keywords

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