The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy

H. C. L. Tsui; L. E. Goff; N. P. Barradas; E. Alves; S. Pereira; H. E. Beere; I. Farrer; C. A. Nicoll; D. A. Ritchie; M. A. Moram

doi:10.1002/pssa.201532292

The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy

H. C. L. Tsui, L. E. Goff, N. P. Barradas, E. Alves, S. Pereira, H. E. Beere, I. Farrer, C. A. Nicoll, D. A. Ritchie, M. A. Moram

Research output: Contribution to journal › Article › peer-review

Abstract

Epitaxial ScxGa1−xN films with 0 ≤ x ≤ 0.50 were grown using molecular beam epitaxy under metal-rich conditions. The ScxGa1−xN growth rate increased with increasing Sc flux despite the use of metal-rich growth conditions, which is attributed to the catalytic decomposition of N2 induced by the presence of Sc. Microstructural analysis showed that phase-pure wurtzite ScxGa1−xN was achieved up to x = 0.26, which is significantly higher than that previously reported for nitrogen-rich conditions, indicating that the use of metal-rich conditions can help to stabilise wurtzite phase ScxGa1−xN.

Original language	English
Pages (from-to)	2837-2842
Journal	Physica Status Solidi. A: Applications and Materials Science
Volume	212
Issue number	12
DOIs	https://doi.org/10.1002/pssa.201532292
Publication status	Published - 9 Dec 2015

Keywords

molecular beam epitaxy
scandium gallium nitrides
transmission electron microscopy

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Tsui, H. C. L., Goff, L. E., Barradas, N. P., Alves, E., Pereira, S., Beere, H. E., Farrer, I., Nicoll, C. A., Ritchie, D. A., & Moram, M. A. (2015). The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy. Physica Status Solidi. A: Applications and Materials Science , 212(12), 2837-2842. https://doi.org/10.1002/pssa.201532292

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title = "The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy",

abstract = "Epitaxial ScxGa1−xN films with 0 ≤ x ≤ 0.50 were grown using molecular beam epitaxy under metal-rich conditions. The ScxGa1−xN growth rate increased with increasing Sc flux despite the use of metal-rich growth conditions, which is attributed to the catalytic decomposition of N2 induced by the presence of Sc. Microstructural analysis showed that phase-pure wurtzite ScxGa1−xN was achieved up to x = 0.26, which is significantly higher than that previously reported for nitrogen-rich conditions, indicating that the use of metal-rich conditions can help to stabilise wurtzite phase ScxGa1−xN.",

keywords = "molecular beam epitaxy, scandium gallium nitrides, transmission electron microscopy",

author = "Tsui, {H. C. L.} and Goff, {L. E.} and Barradas, {N. P.} and E. Alves and S. Pereira and Beere, {H. E.} and I. Farrer and Nicoll, {C. A.} and Ritchie, {D. A.} and Moram, {M. A.}",

year = "2015",

month = dec,

day = "9",

doi = "10.1002/pssa.201532292",

language = "English",

volume = "212",

pages = "2837--2842",

journal = "Physica Status Solidi. A: Applications and Materials Science ",

issn = "1862-6300",

publisher = "John Wiley & Sons Ltd",

number = "12",

}

Tsui, HCL, Goff, LE, Barradas, NP, Alves, E, Pereira, S, Beere, HE, Farrer, I, Nicoll, CA, Ritchie, DA & Moram, MA 2015, 'The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy', Physica Status Solidi. A: Applications and Materials Science , vol. 212, no. 12, pp. 2837-2842. https://doi.org/10.1002/pssa.201532292

TY - JOUR

T1 - The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy

AU - Tsui, H. C. L.

AU - Goff, L. E.

AU - Barradas, N. P.

AU - Alves, E.

AU - Pereira, S.

AU - Beere, H. E.

AU - Farrer, I.

AU - Nicoll, C. A.

AU - Ritchie, D. A.

AU - Moram, M. A.

PY - 2015/12/9

Y1 - 2015/12/9

N2 - Epitaxial ScxGa1−xN films with 0 ≤ x ≤ 0.50 were grown using molecular beam epitaxy under metal-rich conditions. The ScxGa1−xN growth rate increased with increasing Sc flux despite the use of metal-rich growth conditions, which is attributed to the catalytic decomposition of N2 induced by the presence of Sc. Microstructural analysis showed that phase-pure wurtzite ScxGa1−xN was achieved up to x = 0.26, which is significantly higher than that previously reported for nitrogen-rich conditions, indicating that the use of metal-rich conditions can help to stabilise wurtzite phase ScxGa1−xN.

AB - Epitaxial ScxGa1−xN films with 0 ≤ x ≤ 0.50 were grown using molecular beam epitaxy under metal-rich conditions. The ScxGa1−xN growth rate increased with increasing Sc flux despite the use of metal-rich growth conditions, which is attributed to the catalytic decomposition of N2 induced by the presence of Sc. Microstructural analysis showed that phase-pure wurtzite ScxGa1−xN was achieved up to x = 0.26, which is significantly higher than that previously reported for nitrogen-rich conditions, indicating that the use of metal-rich conditions can help to stabilise wurtzite phase ScxGa1−xN.

KW - molecular beam epitaxy

KW - scandium gallium nitrides

KW - transmission electron microscopy

U2 - 10.1002/pssa.201532292

DO - 10.1002/pssa.201532292

M3 - Article

SN - 1862-6300

VL - 212

SP - 2837

EP - 2842

JO - Physica Status Solidi. A: Applications and Materials Science

JF - Physica Status Solidi. A: Applications and Materials Science

IS - 12

ER -

The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy

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