The effect of nano-twins on the thermoelectric properties of Ga2O3(ZnO)(m) (m=9, 11, 13 and 15) homologous compounds

D. T. Alvarez-Ruiz; F. Azough; Thomas Slater; Sarah J. Day; R. Freer

doi:10.1016/j.jeurceramsoc.2020.07.021

The effect of nano-twins on the thermoelectric properties of Ga2O3(ZnO)(m) (m=9, 11, 13 and 15) homologous compounds

D. T. Alvarez-Ruiz, F. Azough, Thomas Slater, Sarah J. Day, R. Freer

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Abstract

Ga ₂O ₃(ZnO) _m (m = integer) homologous compounds are naturally occurring nanostructured materials. Their intrinsically low thermal conductivity makes them attractive for thermoelectric applications. High density Ga ₂O ₃(ZnO) _m (m = 9, 11, 13, and 15) single phase ceramics were prepared by solid-state reaction. Nano-sized, twin-like V-shaped boundaries parallel to b-axis (apex angle ∼ 60°) were observed for all compositions. Atomic resolution Z-contrast imaging and EDS analysis for m = 15 showed segregation of Ga ions at the interface of V-shaped twin boundaries. Thermal and charge transport properties depend on the value of m. Compositions with m = 9 exhibited very low lattice thermal conductivity of 2 to 1.5 W/m.K at 300 K–900 K; compositions with m=15 showed improved power factor of 140 μW/m. K ² at 900 K leading to a thermoelectric figure of merit (ZT value) of 0.055. This study explores the structural variants and routes to improve the thermoelectric properties of these materials

Original language	English
Pages (from-to)	5549-5558
Number of pages	10
Journal	Journal of the European Ceramic Society
Volume	40
Issue number	15
Early online date	13 Jul 2020
DOIs	https://doi.org/10.1016/j.jeurceramsoc.2020.07.021 https://doi.org/10.1016/j.jeurceramsoc.2020.07.021
Publication status	Published - 1 Dec 2020

Keywords

Homologous compounds
Nanostructure
Thermal conductivity
Thermoelectric

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10.1016/j.jeurceramsoc.2020.07.021

JECS Accepted 10 July 20 ZG(9-15)Accepted author manuscript, 2.7 MBLicence: CC BY-NC-ND

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title = "The effect of nano-twins on the thermoelectric properties of Ga2O3(ZnO)(m) (m=9, 11, 13 and 15) homologous compounds",

abstract = "Ga 2O 3(ZnO) m (m = integer) homologous compounds are naturally occurring nanostructured materials. Their intrinsically low thermal conductivity makes them attractive for thermoelectric applications. High density Ga 2O 3(ZnO) m (m = 9, 11, 13, and 15) single phase ceramics were prepared by solid-state reaction. Nano-sized, twin-like V-shaped boundaries parallel to b-axis (apex angle ∼ 60°) were observed for all compositions. Atomic resolution Z-contrast imaging and EDS analysis for m = 15 showed segregation of Ga ions at the interface of V-shaped twin boundaries. Thermal and charge transport properties depend on the value of m. Compositions with m = 9 exhibited very low lattice thermal conductivity of 2 to 1.5 W/m.K at 300 K–900 K; compositions with m=15 showed improved power factor of 140 μW/m. K 2 at 900 K leading to a thermoelectric figure of merit (ZT value) of 0.055. This study explores the structural variants and routes to improve the thermoelectric properties of these materials ",

keywords = "Homologous compounds, Nanostructure, Thermal conductivity, Thermoelectric",

author = "Alvarez-Ruiz, {D. T.} and F. Azough and Thomas Slater and Day, {Sarah J.} and R. Freer",

note = "Funding Information: The authors are grateful to the EPSRC for the provision of funding for this work ( EP/H043462 , EP/I036230/1 , EP/L014068/1 , EP/L017695/1 acknowledged by RF). DTAR would like to acknowledge financial support provided by CONACyT . All research data supporting this publication are directly available within the publication. Publisher Copyright: {\textcopyright} 2020 Elsevier Ltd",

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T1 - The effect of nano-twins on the thermoelectric properties of Ga2O3(ZnO)(m) (m=9, 11, 13 and 15) homologous compounds

AU - Alvarez-Ruiz, D. T.

AU - Azough, F.

AU - Slater, Thomas

AU - Day, Sarah J.

AU - Freer, R.

N1 - Funding Information: The authors are grateful to the EPSRC for the provision of funding for this work ( EP/H043462 , EP/I036230/1 , EP/L014068/1 , EP/L017695/1 acknowledged by RF). DTAR would like to acknowledge financial support provided by CONACyT . All research data supporting this publication are directly available within the publication. Publisher Copyright: © 2020 Elsevier Ltd

PY - 2020/12/1

Y1 - 2020/12/1

N2 - Ga 2O 3(ZnO) m (m = integer) homologous compounds are naturally occurring nanostructured materials. Their intrinsically low thermal conductivity makes them attractive for thermoelectric applications. High density Ga 2O 3(ZnO) m (m = 9, 11, 13, and 15) single phase ceramics were prepared by solid-state reaction. Nano-sized, twin-like V-shaped boundaries parallel to b-axis (apex angle ∼ 60°) were observed for all compositions. Atomic resolution Z-contrast imaging and EDS analysis for m = 15 showed segregation of Ga ions at the interface of V-shaped twin boundaries. Thermal and charge transport properties depend on the value of m. Compositions with m = 9 exhibited very low lattice thermal conductivity of 2 to 1.5 W/m.K at 300 K–900 K; compositions with m=15 showed improved power factor of 140 μW/m. K 2 at 900 K leading to a thermoelectric figure of merit (ZT value) of 0.055. This study explores the structural variants and routes to improve the thermoelectric properties of these materials

AB - Ga 2O 3(ZnO) m (m = integer) homologous compounds are naturally occurring nanostructured materials. Their intrinsically low thermal conductivity makes them attractive for thermoelectric applications. High density Ga 2O 3(ZnO) m (m = 9, 11, 13, and 15) single phase ceramics were prepared by solid-state reaction. Nano-sized, twin-like V-shaped boundaries parallel to b-axis (apex angle ∼ 60°) were observed for all compositions. Atomic resolution Z-contrast imaging and EDS analysis for m = 15 showed segregation of Ga ions at the interface of V-shaped twin boundaries. Thermal and charge transport properties depend on the value of m. Compositions with m = 9 exhibited very low lattice thermal conductivity of 2 to 1.5 W/m.K at 300 K–900 K; compositions with m=15 showed improved power factor of 140 μW/m. K 2 at 900 K leading to a thermoelectric figure of merit (ZT value) of 0.055. This study explores the structural variants and routes to improve the thermoelectric properties of these materials

KW - Homologous compounds

KW - Nanostructure

KW - Thermal conductivity

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The effect of nano-twins on the thermoelectric properties of Ga2O3(ZnO)(m) (m=9, 11, 13 and 15) homologous compounds

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