The electrical assessment of p-isotype Si/SiGe/Si heterostructures grown by MBE

J. C. Brighten, R. A. Kubiak, P. J. Phillips, T. E. Whall, E. H.C. Parker, I. D. Hawkins, A. R. Peaker

Research output: Contribution to journalArticlepeer-review

Abstract

Si/Si0.9Ge0.1 heterostructures have been analyzed using the Capacitance-Voltage (C-V) technique described by Kroemer. A valence band offset of approximately 70 ± 10 meV was deduced, in good agreement with that predicted by other methods. The significant deep level populations revealed by deep level transient spectroscopy and variable temperature C-V methods have a comparatively small effect upon the deduced offset.

Original languageEnglish
Pages (from-to)116-119
Number of pages4
JournalThin Solid Films
Volume222
Issue number1-2
DOIs
Publication statusPublished - 20 Dec 1992

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