TY - JOUR
T1 - The impact of lattice dilation on deep states in MBE GaAs
AU - Poole, I.
AU - Efeoglu, H.
AU - Singer, K. E.
AU - Peaker, A. R.
PY - 1993/2/2
Y1 - 1993/2/2
N2 - Deep level transient spectroscopy (DLTS) of n-type, molecular beam epitaxially grown GaAs has revealed a large increase in the concentrations of the characteristics deep electron traps, known as M states, with erbium doping. Total M trap concentrations in excess of 5 × 1015 cm-3 are measured for a moderate erbium doping level of 1 × 1018 cm-3. These high M trap concentrations can be increased by a further two orders of magnitude by growth upon strained, more heavily erbium-doped material. Dilation of the GaAs matrix, arising in this case from the presence of the large Erbium atoms and ErAs precipitates in the lattice, is believed to play a major role in the creation of these characteristics MBE defects.
AB - Deep level transient spectroscopy (DLTS) of n-type, molecular beam epitaxially grown GaAs has revealed a large increase in the concentrations of the characteristics deep electron traps, known as M states, with erbium doping. Total M trap concentrations in excess of 5 × 1015 cm-3 are measured for a moderate erbium doping level of 1 × 1018 cm-3. These high M trap concentrations can be increased by a further two orders of magnitude by growth upon strained, more heavily erbium-doped material. Dilation of the GaAs matrix, arising in this case from the presence of the large Erbium atoms and ErAs precipitates in the lattice, is believed to play a major role in the creation of these characteristics MBE defects.
UR - http://www.scopus.com/inward/record.url?scp=0027904681&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(93)90715-9
DO - 10.1016/0022-0248(93)90715-9
M3 - Article
AN - SCOPUS:0027904681
SN - 0022-0248
VL - 127
SP - 703
EP - 706
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -