The impact of negative-bias-temperature-instability on the carrier generation lifetime of metal-oxynitride-silicon capacitors

S. N. Volkos, E. S. Efthymiou, S. Bernardini, I. D. Hawkins, A. R. Peaker, G. Petkos

    Research output: Contribution to journalArticlepeer-review

    Abstract

    N -type metal-oxynitride-silicon capacitors were subjected to a negative bias voltage at an elevated temperature. Under this condition, Negative-bias-temperature-instability (NBTI) was evidenced in capacitance-voltage (CV) characteristics with an accompanying decrease, as determined from inversion layer-related (i.e., generation lifetime) deep-level-transient-spectroscopy (DLTS) measurements, in the carrier generation lifetime. An analysis of the dominant defect supplying minority carriers to the inversion layer at the silicon-oxynitride interface revealed a significant change brought about by NBTI. A full recovery of the carrier generation lifetime was observed after several days at zero bias voltage, and room temperature conditions had elapsed following NBTI. Concurrently, a passivation, as inferred from conventional DLTS measurements, of the NBTI-induced trap density occurred at the silicon-oxynitride interface. These relaxation and deactivation phenomena were discussed in the context of a plausible model involving a reaction at the silicon-oxynitride interface between trivalent silicon dangling bond defects and hydrogenous species. © 2006 American Institute of Physics.
    Original languageEnglish
    Article number124103
    JournalJournal of Applied Physics
    Volume100
    Issue number12
    DOIs
    Publication statusPublished - 2006

    Keywords

    • silicon, silicon compounds, elemental semiconductors, MIS capacitors, deep level transient spectroscopy, inversion layers, carrier lifetime, passivation, dangling bonds

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