The incorporation of erbium into molecular beam epitaxy grown gallium arsenide

P. Rutter; K. E. Singer; A. R. Peaker

doi:10.1016/S0022-0248(97)00350-3

The incorporation of erbium into molecular beam epitaxy grown gallium arsenide

P. Rutter, K. E. Singer^*, A. R. Peaker

^*Corresponding author for this work

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Abstract

Erbium-doped gallium arsenide has been grown by molecular beam epitaxy under varying growth conditions and analysed by secondary ion mass spectrometry. The concentration of erbium incorporated into the gallium arsenide lattice for a given effusion cell temperature has been found to vary considerably with the V : III (As : Ga) flux ratio. Higher levels of erbium incorporation occur when growth takes place close to stoichiometry rather than under arsenic-rich conditions. This behaviour has been observed for erbium concentrations between 10¹⁶ and 5 x 10¹⁹ cm^-3. SIMS data show the existence of an erbium-rich surface layer which, in the presence of unintentional impurities, is incorporated into the GaAs at an enhanced rate forming an unusual doping spike.

Original language	English
Pages (from-to)	247-254
Number of pages	8
Journal	Journal of Crystal Growth
Volume	182
Issue number	3-4
DOIs	https://doi.org/10.1016/S0022-0248(97)00350-3
Publication status	Published - Dec 1997

Keywords

Erbium
Gallium arsenide
Molecular beam epitaxial growth
Thin films

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10.1016/S0022-0248(97)00350-3

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title = "The incorporation of erbium into molecular beam epitaxy grown gallium arsenide",

abstract = "Erbium-doped gallium arsenide has been grown by molecular beam epitaxy under varying growth conditions and analysed by secondary ion mass spectrometry. The concentration of erbium incorporated into the gallium arsenide lattice for a given effusion cell temperature has been found to vary considerably with the V : III (As : Ga) flux ratio. Higher levels of erbium incorporation occur when growth takes place close to stoichiometry rather than under arsenic-rich conditions. This behaviour has been observed for erbium concentrations between 1016 and 5 x 1019 cm-3. SIMS data show the existence of an erbium-rich surface layer which, in the presence of unintentional impurities, is incorporated into the GaAs at an enhanced rate forming an unusual doping spike.",

keywords = "Erbium, Gallium arsenide, Molecular beam epitaxial growth, Thin films",

author = "P. Rutter and Singer, {K. E.} and Peaker, {A. R.}",

note = "Funding Information: This work has been supported under the European Community ESPRIT Programme (SOLDES Project 7260). P. Rutter also acknowledges the financial support of the EPSRC. The Secondary Ion Mass Spectrometry was carried out by MATS UK, Liverpool.",

year = "1997",

month = dec,

doi = "10.1016/S0022-0248(97)00350-3",

language = "English",

volume = "182",

pages = "247--254",

journal = "Journal of Crystal Growth ",

issn = "0022-0248",

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number = "3-4",

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TY - JOUR

T1 - The incorporation of erbium into molecular beam epitaxy grown gallium arsenide

AU - Rutter, P.

AU - Singer, K. E.

AU - Peaker, A. R.

N1 - Funding Information: This work has been supported under the European Community ESPRIT Programme (SOLDES Project 7260). P. Rutter also acknowledges the financial support of the EPSRC. The Secondary Ion Mass Spectrometry was carried out by MATS UK, Liverpool.

PY - 1997/12

Y1 - 1997/12

N2 - Erbium-doped gallium arsenide has been grown by molecular beam epitaxy under varying growth conditions and analysed by secondary ion mass spectrometry. The concentration of erbium incorporated into the gallium arsenide lattice for a given effusion cell temperature has been found to vary considerably with the V : III (As : Ga) flux ratio. Higher levels of erbium incorporation occur when growth takes place close to stoichiometry rather than under arsenic-rich conditions. This behaviour has been observed for erbium concentrations between 1016 and 5 x 1019 cm-3. SIMS data show the existence of an erbium-rich surface layer which, in the presence of unintentional impurities, is incorporated into the GaAs at an enhanced rate forming an unusual doping spike.

AB - Erbium-doped gallium arsenide has been grown by molecular beam epitaxy under varying growth conditions and analysed by secondary ion mass spectrometry. The concentration of erbium incorporated into the gallium arsenide lattice for a given effusion cell temperature has been found to vary considerably with the V : III (As : Ga) flux ratio. Higher levels of erbium incorporation occur when growth takes place close to stoichiometry rather than under arsenic-rich conditions. This behaviour has been observed for erbium concentrations between 1016 and 5 x 1019 cm-3. SIMS data show the existence of an erbium-rich surface layer which, in the presence of unintentional impurities, is incorporated into the GaAs at an enhanced rate forming an unusual doping spike.

KW - Erbium

KW - Gallium arsenide

KW - Molecular beam epitaxial growth

KW - Thin films

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U2 - 10.1016/S0022-0248(97)00350-3

DO - 10.1016/S0022-0248(97)00350-3

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SN - 0022-0248

VL - 182

SP - 247

EP - 254

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

The incorporation of erbium into molecular beam epitaxy grown gallium arsenide

Abstract

Keywords

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