The properties of β-FeSi2 fabricated by ion beam assisted deposition as a function of annealing conditions for use in solar cell applications

C. N. McKinty*, K. J. Kirkby, K. P. Homewood, S. P. Edwards, G. Shao, R. Valizadeh, J. S. Colligon

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper we investigate the formation of β-FeSi2 (from co-deposited layers of Fe and Si produced by ion beam assisted deposition) under a number of annealing regimes (annealing temperatures between 100 and 900 °C and times up to 18 h) by optical characterisation of the band edge parameters. The results have indicated that both annealing temperatures and times have a strong effect on the number of defects underneath the fundamental edge of absorption. The measurement temperature dependency of the band gap is also found to be dependent on the annealing conditions.

Original languageEnglish
Pages (from-to)179-182
Number of pages4
JournalNuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Volume188
Issue number1-4
DOIs
Publication statusPublished - Apr 2002

Keywords

  • Beta iron-disilicide
  • FeSi
  • IBAD

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